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參數(shù)資料
| 型號： | T2525N638 |
| 廠商： | Atmel Corp. |
| 英文描述： | IR RECEIVER ASSP |
| 中文描述： | 紅外線接收器ASSP的 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 219K |
| 代理商： | T2525N638 |
3
T2525
4657D–AUTO–11/03
Electrical Characteristics
T
amb
= 25°C, V
S
= 5
V unless otherwise specified.
No.
Parameters
1
Supply
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.1
Supply-voltage range
1
V
S
I
S
4.5
5
5.5
V
C
1
.
2
2
Supply current
Output
I
IN
= 0
1
0.8
1.1
1.4
mA
B
2.1
Internal pull-up
resistor
(1)
T
amb
= 25°C;
see Figure 9 on page 7
1,3
R
PU
30/40
k
A
2.2
Output voltage low
I
L
= 2 mA;
see Figure 9 on page 7
3,6
V
OL
250
mV
B
2.3
Output voltage high
3,1
V
OH
V
S
- 0.25
Vs
V
B
2.4
Output current
clamping
Input
R
2
= 0;
see Figure 9 on page 7
3,6
I
OCL
8
mA
B
3
3.1
Input DC current
V
IN
= 0;
see Figure 9 on page 7
5
I
IN_DCMAX
-85
μA
C
3.2
Input DC current;
Figure 4 on page 5
V
IN
= 0; V
s
= 5 V,
T
amb
= 25°C
Test signal:
see Figure 8 on page 7
V
S
= 5 V,
T
amb
= 25°C,
I
IN_DC
= 1 μA;
square pp,
burst N = 16,
f = f
0
; t
PER
= 10 ms,
Figure 8 on page 7;
BER = 50
(2)
5
I
IN_DCMAX
-530
-960
μA
B
3.3
Minimum detection
threshold current;
Figure 3 on page 5
3
I
Eemin
-520
pA
B
3.4
Minimum detection
threshold current with
AC current disturbance
IIN_AC100 = 3 μA at
100 Hz
Test signal:
see Figure 8 on page 7
V
S
= 5 V,
T
amb
= 25°C,
I
IN_DC
= 1 μA,
square pp,
burst N = 16,
f = f
0
; t
PER
= 10 ms,
Figure 8 on page 7;
BER = 50%
(2)
3
I
Eemin
-800
pA
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
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