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參數(shù)資料
| 型號(hào)： | T2316162A-60 |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 1024K x 16 DYNAMIC RAM EDO PAGE MODE |
| 中文描述： | 1024K × 16動(dòng)態(tài)隨機(jī)存儲(chǔ)器EDO公司頁面模式 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 139K |
| 代理商： | T2316162A-60 |
TE
CH
tm
CAPACITANCE
(Ta =25
°
C, Vcc =5V
±
10 %)
T2316162A
TM Technology Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date:APR. 2002
Revision:E
Parameter
Symbol
CI1
CI2
CDQ
Typ
-
-
-
Max
5
7
10
Unit
pF
pF
pF
Notes
1
1
1
Input Capacitance (address)
Input Capacitance (clocks)
Output Capacitance (data-in, data-out)
Note:
1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
AC ELECTRICAL CHARACTERISTICS
(note 14)
(Ta =0 to 70
°
C, Vcc=5V
±
10 %, Vss=0V)
Test Conditions (note 29)
-45
-50
-60
AC CHARACTERISTICS
PARAMETER
Read or Write Cycle Time
Read Write Cycle Time
EDO-Page-Mode Read or Write Cycle Time
EDO-Page-Mode Read-Write Cycle Time
Access Time From RAS
Access Time From CAS
Access Time From OE
Access Time From Column Address
SYM
MIN
MAX
MIN MAX MIN
MAX
UNIT
Notes
80
84
tRWC 105
113
tPC
16
20
tPCM
46
58
tRAC
45
50
tCAC
11
13
tOAC
11
13
tAA
19
25
tACP
22
27
tRAS
45
10K
50
10K
tRASC 45 100K 50 100K 60 100K
tRSH
11
13
tRP
28
30
tCAS
6
10K
8
10K
tCSH
40
40
tCP
5
6
tRCD
10
34
12
37
tCRP
5
5
tASR
0
0
tRAH
5
8
tRAD
8
26
10
28
tASC
0
0
tCAH
6
8
tAR
35
38
tRC
110
140
25
70
ns
ns
ns
ns
ns
22
22
4
60
15
ns
5,20
15
ns
13,20
30
35
ns
ns
20
Access Time From CAS Precharge
RAS Pulse Width
RAS Pulse Width (EDO Page Mode)
60
10K
ns
ns
RAS Hold Time
RAS Precharge Time
CAS Pulse Width
15
ns
27
40
ns
15
10K
ns
26
CAS Hold Time
CAS Precharge Time (EDO Page Mode)
RAS to CAS Delay Time
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time (Reference to
RAS)
Column Address to RAS Lead Time
60
ns
19
10
ns
23
20
45
ns
7,18
5
ns
19
0
10
12
ns
ns
ns
8
30
0
10
45
ns
ns
ns
18
18
tRAL
19
23
30
ns
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