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參數(shù)資料
| 型號： | T224162B |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 256K x 16 DYNAMIC RAM EDO PAGE MODE |
| 中文描述： | 256K × 16動態(tài)隨機存儲器EDO公司頁面模式 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 143K |
| 代理商： | T224162B |
TE
CH
tm
CAPACITANCE
(Ta =25
°
C, Vcc =5V
±
10 %)
T224162B
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date:AUG. 2000
Revision:L
Parameter
Symbol
CI1
CI2
CI/O
Typ
-
-
-
Max
5
7
10
Unit
pF
pF
pF
Notes
1
1
1
Input Capacitance (address)
Input Capacitance (clocks)
Output Capacitance (data-in, data-out)
Note:
1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
AC ELECTRICAL CHARACTERISTICS
(note 14)
(Ta =0 to 70
°
C, Vcc=5V
±
10 %, Vss=0V)
Test Conditions (note 29)
Input timing reference levels: 0.8V, 2.4V
Output Load: 2TTL gate + CL (50pF)
-25
-28
-35
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN MAX MIN
MAXUNIT
Notes
-22
-45
-50
AC CHARACTERISTICS
PARAMETER
Read or Write Cycle Time
tRC
Read Write Cycle Time
EDO-Page-Mode Read or
Write Cycle Time
EDO-Page-Mode Read-
Write Cycle Time
Access Time From RAS
Access Time From
CAS
Access Time From OE
Access Time From Column
Address
Access Time From CAS
Precharge
RAS
Pulse Width
RAS Pulse Width
(EDO Page Mode)
RAS Hold Time
RAS Precharge Time
CAS Pulse Width
CAS Hold Time
CAS Precharge Time
(EDO Page Mode)
RAS
to
CAS
Delay Time
tRCD
CAS to RAS Precharge
Time
SYM
42
45
48
65
85
100
ns
ns
tRWC 62
65
70
95
115
135
tPC
8
10
10
12
16
20
ns 22
tPCM
30
32
34
40
46
57
ns
22
tRAC
tCAC
tOAC
22
25
28
35
45
50 ns
13 ns
4
5,20
7
7
7
9
11
8
8
8
9
11
13 ns
13,20
tAA
11
12
13
15
19
23 ns
tACP
13
14
15
18
22
26 ns
20
tRAS
22 10K 25 10K 28 10K 35 10K 45
10K 50
10K
ns
tRASC22 100K 25 100K 28 100K 35 100K 45 100K 50 100K
ns
tRSH
tRP
tCAS
tCSH
7
7
7
9
11
13
ns
27
15
15
17
25
35
37
ns
26
4
10K
4
10K
4
10K
4
10K
6
10K
8
10K
ns
19
20
22
30
40
50
ns
19
tCP
3
3
3
3
5
6
ns
23
9
15
10
17
10
19
10
26
10
34
19
37
ns
7,18
tCRP
3
3
3
3
5
5
ns
19
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T224162B-22 | 256K x 16 DYNAMIC RAM EDO PAGE MODE |
| T224162B-25 | Binary Coded Rotary DIP Switches |
| T224162B-28 | 256K x 16 DYNAMIC RAM EDO PAGE MODE |
| T224162B-35 | 256K x 16 DYNAMIC RAM EDO PAGE MODE |
| T224162B-45 | 256K x 16 DYNAMIC RAM EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T224162B-22 | 制造商:TMT 制造商全稱:TMT 功能描述:256K x 16 DYNAMIC RAM EDO PAGE MODE |
| T224162B-25 | 制造商:TMT 制造商全稱:TMT 功能描述:256K x 16 DYNAMIC RAM EDO PAGE MODE |
| T224162B-28 | 制造商:TMT 制造商全稱:TMT 功能描述:256K x 16 DYNAMIC RAM EDO PAGE MODE |
| T224162B-35 | 制造商:TMT 制造商全稱:TMT 功能描述:256K x 16 DYNAMIC RAM EDO PAGE MODE |
| T224162B-45 | 制造商:TMT 制造商全稱:TMT 功能描述:256K x 16 DYNAMIC RAM EDO PAGE MODE |
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