
TE
CH
tm
AC CHARACTERISTICS
(note 1,2,3) (Ta = 0 to 70
°
C)
AC TEST CONDITIONS:
Vcc=5V
±
10%, input pulse level = 0 to 3V
Input rise and fall times: 2ns
Output Load: 2TTL gate + CL (50pF)
AC CHARACTERISTICS
PARAMETER
Read or Write Cycle Time
Read-Modify-Write Cycle Time
Fast-Page-Mode Read or Write Cycle Time
Fast-Page-Mode Read-Write Cycle Time
Access Time From RAS
Access Time From CAS
Access Time From OE
Access Time From Column Address
Access Time From
CAS
Precharge
RAS Pulse Width
RAS Pulse Width
RAS Hold Time
RAS Precharge Time
CAS
Pulse Width
CAS Hold Time
CAS
Precharge Time
RAS to CAS Delay Time
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time (Reference to
RAS)
Column Address to RAS Lead Time
Read Command Setup Time
Read Command Hold Time Reference to
CAS
tRCH
Read Command Hold Time Reference to RAS
tRRH
CAS
to Output in Low-Z
Output Buffer Turn-off Delay From CASor
RAS
T224160B
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:B
-30
-35
-45
-60
SYM
MIN MAX MIN MAX MIN MAX MIN MAX
55
65
tRWC 85
95
tPC
19
21
tPCM
56
58
tRAC
30
35
tCAC
8
tOAC
8
tAA
13
15
tACP
15
18
tRAS
30 10K 35 10K 45 10K 60 10K ns
tRASC 30
100K
35
100K
45
100K
60
100K
ns
tRSH
8
9
tRP
25
30
tCAS
5 10K 6
10K 7 10K 15 10K ns
tCSH
30
35
tCP
3
3
tRCD
10
24
10
28
tCRP
3
3
tASR
0
0
tRAH
5
5
tRAD
8
17
8
20
tASC
0
0
tCAH
4
4
UNIT
Note
s
tRC
85
115
25
65
110
155
40
80
ns
ns
ns
ns
ns
4
ns
5
ns
13
ns
8
ns
45
11
11
19
22
60
15
15
30
35
9
9
11
35
15
40
ns
ns
45
5
10
5
0
5
8
0
6
60
10
20
5
0
5
15
0
15
ns
ns
ns
7
ns
ns
ns
ns
8
ns
ns
ns
37
26
45
30
tAR
26
30
40
50
tRAL
tRCS
13
0
0
0
15
0
0
0
19
0
0
0
30
0
0
0
ns
ns
14
ns
9,14
ns
9
tCLZ
3
3
3
3
ns
tOFF1
3
15
3
15
3
15
3
15
ns
10,16