參數(shù)資料
型號(hào)： T191B256K008ASC-0100
廠商： KEMET Corporation
英文描述： Wet Tantalum General Information
中文描述： 液體鉭一般信息
文件頁(yè)數(shù)： 4/28頁(yè)
文件大?。?/td> 1874K
代理商： T191B256K008ASC-0100
KEMET Electronics Corporation, P.O. Box 5928, Greenville, SC 29606 (864) 963-6300
6. Dissipation Factor (DF
)
DF is measured at 120 Hz and 25°C with up to 1
volt rms applied. Note that, in either operation, peak AC
plus DC bias must not exceed either rated voltage
Measurement circuits are of high impedance, however,
and under these conditions 1 volt rms may be applied
even to 6 volt capacitors (23% peak reversal) without a
DC bias. DC bias is thus normally not used, except
when rated voltage is below 6 volts and the AC signal
level exceeds 0.3 vrms. However, MIL-PRF-39006 pro-
vides for up to 2.2 volts DC. DC bias is not commonly
used at room temperature, but is more commonly used
at elevated temperatures.
Dissipation Factor (DF) is a useful low-frequency
measure of the resistive component in capacitors. It is
the ration of the unavoidable resistance to the capaci-
tive reactance, usually expressed in percent. DF
increases with temperature above +25°C and may also
increase at lower temperatures. Unfortunately, one
general limit for DF cannot be specified for all capaci-
tance/voltage combinations, nor can response to tem-
perature be simply stated. Catalogs for the respective
series list DF limits under various conditions.
Dissipation factor increases with increasing fre-
quency as would be expected from the decreasing
capacitive reactance. DF is not a very useful parame-
ter above about 1 kHz. The DF of larger capacitance
values increases more rapidly than that of smaller rat-
ings.
DC bias causes a small reduction in capacitance,
up to about 2% when full rated voltage is applied, as
bias, DF is also reduced by the presence of DC bias.
Rated voltage may cause a decrease in DF of about
0.2% (e.g., a decrease from 3.6 to 3.4% DF).
DF is defined as ESR and is also referred to occa-
Xc
sionally, as tan d or “l(fā)oss tangent.” The Quality Factor”,
Q, is the reciprocal of DF (DF is not expressed in per-
cent in this calculation). Another expression, rarely
used is the “power factor,” or ESR. Power factor is
cos
, while DF is
cot
. Z
7. DC Leakage (DCL)
DC leakage is affected by voltage to a much larger
extent, and this effect can frequently be used to advan-
tage in circuits where only very low leakage currents
can be tolerated.
Figure 2. Typical Effect of Temperature upon DC
Leakage Current
DC leakage current (DCL) increases with increasing
temperature according to the typical curve of Figure 2.
Leakage current is measured at a rated voltage
through +85°C and may also be measured at +125°C
with 2/3 of rated voltage applied.
8. Rated Voltage
This term refers to the maximum continuous DC
working voltage permissible at temperatures of +85°C or
below. The lower operating temperature is specified
as -55°C. Operation above +85°C is permissible, with
reduced working voltage. The typical working voltage
reduction is to 2/3 of rated voltage at +125°C.
9. Working Voltage
This is the maximum recommended peak DC oper-
ating voltage for continuous duty at or below 85°C with-
out DC voltage surges or AC ripple superimposed. No
voltage derating is required below 85°C. Capacitors may
be operated to 125°C with working voltage linearly der-
ated to 2/3 of the 85°C rating at 125°C.
Figure 3. Working Voltage Change with Temperature
10.Surge Voltage
Surge Voltage is defined as the maximum voltage
to which the capacitor should be subjected under tran-
sient conditions, including peak AC ripple and all DC
transients.
Table 1. Surge Voltage Ratings
A typical surge voltage test is performed at +85°C
with the applicable surge voltage per Table 1. The
surge voltage is applied for 1000 cycles of 30 seconds
on voltage through a 1000 ± 100 ohm series resistor
and 30 seconds off voltage with the capacitor dis-
charged through a 1,000 ohm resistor. Upon complet-
ing the test, the capacitors are allowed to stabilize at
room temperature. Capacitance, DF, and DCL are then
tested:
1. The DCL should not exceed the initial 25°C limit.
2. The capacitance should be within ±2% of initial
value.
3. The DF should not exceed the initial 25°C limit.
4
DC Working
Voltage @ 85°C
6
8
10
15
25
30
50
60
75 100 125
Surge Voltage
6.9 9.2 11.5 17.2 28.8 34.5 57.5 69
86.2 115 144
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T191B256K008ASC-0200 制造商:KEMET 制造商全稱:Kemet Corporation 功能描述:Wet Tantalum General Information
T191B256M008ASC-0100 制造商:KEMET 制造商全稱:Kemet Corporation 功能描述:Wet Tantalum General Information
T191B256M008ASC-0200 制造商:KEMET 制造商全稱:Kemet Corporation 功能描述:Wet Tantalum General Information
T191B276K125AS 功能描述:鉭質(zhì)電容器-濕式 125volts 27uF 10% RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
T191B276M125AS 功能描述:鉭質(zhì)電容器-濕式 125volts 27uF 20% RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
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