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參數(shù)資料
TE
CH
tm
WRITE CYCLE 3
(
UB
,
LB
Controlled)
T15V2M16B
TM Technology Inc. reserves the right
P. 9
to change products or specifications without notice.
Publication Date: NOV. 2002
Revision:A
NOTES ( WRITE CYCLE ) :
1. A write occurs during the overlap of a low
CE
, a low WE. A write begins at the lateat
transition among
CE
goes low, WEgoing low. A write end at the earliest transition among
CE
going high, WE going high.
t
WP
is measured from the beginning of write to the end of
write.
2.
t
CW
is measured from the later of
CE
going low to the end of write.
3.
t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
DON'T CARE
UNDEFINED
tWC
tDW
DI N
tDH
tWR
tAS
tWP
tCW
A d d r e s s
C E
W E
DO U T
U B / L B
tAW
High-Z
High-Z
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T15V2M16B-55SI | 128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70C | 128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70CI | 128K X 16 LOW POWER CMOS STATIC RAM |
| T15V4M08A | 512K X 8 LOW POWER CMOS STATIC RAM |
| T15V4M08A-55C | 512K X 8 LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T15V2M16B-55SI | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70C | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70CI | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V4M08A | 制造商:TMT 制造商全稱:TMT 功能描述:512K X 8 LOW POWER CMOS STATIC RAM |
| T15V4M08A-55C | 制造商:TMT 制造商全稱:TMT 功能描述:512K X 8 LOW POWER CMOS STATIC RAM |
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