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參數(shù)資料
| 型號： | T15V2M08A-100C |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 256K X 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 256K × 8低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | T15V2M08A-100C |
TE
CH
tm
OPERATING CHARACTERISTICS
(Vcc = 2.7 to 3.6V, Gnd = 0V, Ta = -40
°
C to 85
°
C)
Preliminary T15V2M08A
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:0.A
-55
-70
-100
PARAMETER SYM.
TEST CONDITIONS
Min
Max
Min
Max
Min
Max
UNIT
Input Leakage
Current
I
LI
Vcc = Max,
V
IN
= Gnd to Vcc
CE1
= V
IH
or CE2= V
IL
or
OE
= V
IH
or
WE
= V
IL
V
OUT
= Gnd to Vcc
CE1
= V
IL
,CE2= V
IH,
WE
=V
IH,
OE
= V
IH
,
V
IN
= V
IH
or V
IL,
I
OUT
=0mA
Cycle time=1us,
100% duty, I
OUT
=0mA,
CE1
≤
0.2V,
CE2
≥
V
CC
-0.2V,
V
IN
≤
0.2V
Cycle time=min,
100% duty, I
OUT
=0mA,
CE1
= V
IL
,CE2= V
IH ,
V
IN
= V
IH
or V
IL
CE1
=
V
IH
CE2= V
IL
-
1
-
1
-
1
uA
Output Leakage
Current
I
LO
-
1
-
1
-
1
uA
Operating Power
Supply Current
I
CC
-
2
-
2
-
2
mA
I
CC1
-
3
-
3
-
3
mA
Average Operating
Current
I
CC2
-
40
-
35
-
25
mA
Standby Power
Supply Current
(TTL Level)
I
SB
-
0.5
-
0.5
-
0.5
mA
Standby Power
Supply Current
(CMOS Level)
I
SB1
CE1
≥
Vcc-0.2V,
CE2
≥
V
CC
-0.2V
or CE2
≤
0.2V
V
IN
≤
0.2V or
V
IN
≥
Vcc-0.2V
I
OL
= 2.0mA
I
OH
= -1.0 mA
-
5
-
5
-
5
uA
Output Low Voltage
V
OL
Output High Voltage
V
OH
-
0.4
-
-
0.4
-
-
0.4
-
V
V
2.2
2.2
2.2
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相關代理商/技術參數(shù) |
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|---|---|
| T15V2M08A-55H | 制造商:TMT 制造商全稱:TMT 功能描述:256K X 8 LOW POWER CMOS STATIC RAM |
| T15V2M08A-70P | 制造商:TMT 制造商全稱:TMT 功能描述:256K X 8 LOW POWER CMOS STATIC RAM |
| T15V2M16B | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-55S | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-55SI | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
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