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參數(shù)資料
| 型號： | T15N1M16A-70SI |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 64K X 16 LOW POWER CMOS STATIC RAM |
| 中文描述： | 64K的× 16低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 102K |
| 代理商： | T15N1M16A-70SI |
TE
CH
tm
ABSOLUTE MAXIMUM RATINGS*
T15N1M16A
TM Technology Inc. reserves the right
P. 3
to change products or specifications without notice.
Publication Date: JUL . 2002
Revision: A
PARAMETER
SYM
V
R
P
D
T
STG
I
BIAS
MIN.
-0.5
-
-55
0 / -40
MAX.
+4.6 V
0.7
+150
+70 / +85
UNIT
V
W
°
C
°
C
Voltage on Any Pin Relative to VSS
Power Dissipation
Storage Temperature
Temperature Under Bias
*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and function operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
CE
H
X*
L
L
L
L
L
L
L
L
*Note: X = Don’t Care (Must be low or high state), L = Low, H = High
OE
X*
X*
H
H
L
L
L
X*
X*
X*
WE
X*
X*
H
H
H
H
H
L
L
L
LB
X*
H
L
X*
L
H
L
L
H
L
UB
X*
H
X*
L
H
L
L
H
L
L
I/O 1~8
High-Z
High-Z
High-Z
High-Z
Data Out
High-Z
Data Out
Data In
High-Z
Data In
I/O 9~16
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
Data Out
High-Z
Data In
Data In
MODE
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
(Ta = 0
°
C to +70
°
C / -40
°
C ~ +85
°
C *)
PARAMETER
SYM
Vcc
V
SS
V
IH
V
IL
MIN
2.4
0.0
2.0
-0.5*
TYP
-
0.0
-
-
MAX
3.6
0.0
Vcc+0.3
0.4
UNIT
V
V
V
V
Supply Voltage
Input Voltage
*
V
IL
min = -1.0V for pulse width less than
t
RC
/2
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