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參數(shù)資料
| 型號： | T14M256A |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 32K X 8 HIGH SPEED CMOS STATIC RAM |
| 中文描述： | 32K的乘八高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 74K |
| 代理商： | T14M256A |
TE
CH
tm
CAPACITANCE
T14M256A
Taiwan Memory Technology, Inc. reserves the right
P. 3
to change products or specifications without notice.
Publication Date: SEP. 2001
Revision: G
(Vcc = 5V, Ta = 25
°
C, f = 1 MHz)
PARAMETER
SYMBOL
C
IN
C
I/O
CONDITION
V
IN
= 0V
V
OUT
= 0V
MAX.
6
8
UNIT
pF
pF
Input Capacitance
Input/ Output Capacitance
Note:
These parameters are sampled but not 100% tested.
AC TEST CONDITIONS
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
0V to 3V
3 ns
1.5V
C
L
=30pF,
I
OH
/
I
OL
= -4mA/8mA
AC TEST LOADS AND WAVEFORM
R1 480 ohm
5V
OUTPUT
30pF
Including
Jig and
Scope
R2
255 ohm
R1 480 ohm
5V
OUTPUT
5pF
Including
Jig and
Scope
R2
255
ohm
3.0V
0 V
90%
90%
10%
10%
3ns
3ns
(For T
CLZ
, T
OLZ
, T
CHZ
, T
OHZ
, T
WHZ
, T
OW
)
DQ
Fig.1
Z0 = 50 ohm
50
ohm
30 pF
Vt =1.73V
DQ
Fig.3
Z0 = 50
ohm
50
ohm
5 pF
Vt =1.73V
Fig.2
Fig.4
Fig.5
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