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參數(shù)資料
| 型號： | T10C220B |
| 廠商： | CRYDOM CORP |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | 265 V, 250 A, SILICON SURGE PROTECTOR |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 304K |
| 代理商： | T10C220B |
DC SUPPLY
R
Equipment
to be
protected
VC
IH >
VC
R
SLIC PROTECTION
CR0640SB
To SLIC
Line
(-)
CR0640SB
To SLIC
Line
(-)
(+)
(-)
or
COMPLETE PC BOARD
OPERATION PROTECTION
(-)
CR0640
SB
(-)
(+)
(-)
Integrated
SLIC
-VBattery
Line
Secondary
protection
off-hook
Primary
protection
on-hook
CR2300
SB
Ring
relay
On-hook
Off-hook
On-hook
Off-hook
Ring
Generator
or Ring
Detection
Circuit
PABX PROTECTION
CR1300SB
2
To Order: 1-877-502-5500 Fax: 1-858-715-7280
Thyristors (SiBOD Breakover Devices)
SiBOD
Series
Application Notes
The Added Crydom Benefit
Crydom Thyristors (SiBOD Breakover
Devices) offer the highest quality and
performance. They also come with an
added benefit – service and technical
assistance to help ensure optimum pro-
tection for your telecommunications
application.
SiBOD Series
The Crydom SiBOD is a four-layer thyristor-
based protector designed specifically for
telecommunications applications. It has
greater capacity for diverting surge cur-
rents than an avalanche TVS device.
The Crydom series protector is based on
the proven technology of the SiBOD prod-
uct. Designed for transient voltage protec-
tion of telecommunications equipment, it
provides higher power handling than a
conventional avalanche diode (TVS), and
when compared to a GDT offers lower volt-
age clamping levels and infinite surge life.
Electrical Characteristics
The electrical characteristics of the
SiBOD devices are similar to those of a
self-gated Triac, but the SiBOD are two-
terminal devices with no gate. The gate
function is achieved by an internal current
controlled mechanism.
Like the TVS diodes, the SiBOD have a
stand-off voltage (VRM) that should be equal
to or greater than the operating voltage of
the system to be protected. At this voltage
(VRM) the current consumption of the SiBOD
are negligible and will not effect the pro-
tected system.
When a transient occurs, the voltage across
the SiBOD will increase until the breakdown
voltage (VBR) is reached. At this point the
device will operate in a similar way to a
TVS device and is in an avalanche mode.
The voltage of the transient will now be
limited and will only increase by a few
volts as the device diverts more current.
As this transient current rises, a level of
current through the device is reached
(IBO), causing the device to switch to a
fully conductive state such that the volt-
age across the device is now only a few
volts (VT). The voltage at which the device
switches from the avalanche mode to the
fully conductive state (VT) is known as the
breakover voltage (VBO). When the device
is in the VT state, high currents can be
diverted without damage to the SiBOD
due to the low voltage across the device,
since the limiting factor in such devices is
dissipated power (V X I).
Resetting of the device to the nonconduct-
ing state is controlled by the current flowing
through the device. When the current falls
below a certain value, known as the holding
current (IH), the device resets automatically.
As with the avalanche TVS device, if the
SiBOD device is subjected to a surge
current that is beyond its maximum rating,
the device will fail in short-circuit mode,
which ensures that the equipment is
ultimately protected.
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PDF描述 |
|---|---|
| T10C220E | 265 V, 250 A, SILICON SURGE PROTECTOR |
| T10C270B | 360 V, 250 A, SILICON SURGE PROTECTOR |
| T10C270E | 360 V, 250 A, SILICON SURGE PROTECTOR |
| T10C080E | 120 V, 250 A, SILICON SURGE PROTECTOR |
| T10C180E | 210 V, 250 A, SILICON SURGE PROTECTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T10C220BF | 功能描述:硅對稱二端開關(guān)元件 100A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| T10C220E | 功能描述:硅對稱二端開關(guān)元件 100A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| T10C220EF | 功能描述:硅對稱二端開關(guān)元件 100A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| T10C220J | 功能描述:硅對稱二端開關(guān)元件 100A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| T10C220JF | 功能描述:硅對稱二端開關(guān)元件 100A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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