參數(shù)資料
型號: T106D1
英文描述: PTSE 19C 19#20 SKT PLUG
中文描述: 敏感可控硅
文件頁數(shù): 8/12頁
文件大?。?/td> 198K
代理商: T106D1
Data Sheets
Sensitive SCRs
2002 Teccor Electronics
E5 - 5
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
Electrical Specifications Notes
(1) See Figure E5.1 through Figure E5.9 for current ratings at
specified operating temperatures.
(2) See Figure E5.10 for IGT versus TC or TL.
(3) See Figure E5.11 for instantaneous on-state current (iT) versus on-
state voltage (vT) TYP.
(4) See Figure E5.12 for VGT versus TC or TL.
(5) See Figure E5.13 for IH versus TC or TL.
(6) For more than one full cycle, see Figure E5.14.
(7) 0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 s minimum,
15 s maximum. See Figure E5.20 and Figure E5.21.
(8) See Figure E5.15 for tgt versus IGT.
(9) Test conditions as follows:
– TC or TL
80 °C, rectangular current waveform
– Rate-of-rise of current
10 A/s
– Rate-of-reversal of current
5A/s
– ITM = 1 A (50 s pulse), Repetition Rate = 60 pps
– VRRM = Rated
– VR = 15 V minimum, VDRM = Rated
– Rate-of-rise reapplied forward blocking voltage = 5 V/s
– Gate Bias = 0 V, 100
W (during turn-off time interval)
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 APK; T106/T107 devices are 4 APK.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) VD = 6 V dc, RL = 100
W (See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(14) IGT = 500 A maximum at TC = -40 °C for T106 devices
(15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(16) IH = 6 mA maximum at TC = -40 °C for T106 devices
(17) Pulse Width
10 s
(18) IGT = 350 A maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(19) Latching current can be higher than 20 mA for higher IGT types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(20) TC or TL = TJ for test conditions in off state
(21) IDRM and IRRM = 50 A for 2N5064 and 100 A for 2N6565 at
125 °C
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) TC = 110 °C
VGT
IH
IGM
VGRM
PGM
PG(AV)
ITSM
dv/dt
di/dt
tgt
tq
l2t
(4) (12) (22)
Volts
(5) (19)
mAmps
(17)
Amps
Volts
(17)
Watts
(6) (13)
Amps
Volts/Sec
Amps/Sec
(8)
Sec
(9)
Sec
Amps2Sec
TC =
-40 °C
TC =
25 °C
TC =
110 °C
TC = 110 °C
MAX
MIN
60/50 Hz
TYP
MAX
1
0.8
0.25
6
1
6
1
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8
1
6
1
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
6
1
6
1
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8
1
6
1
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
6
1
6
1
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8
1
6
1
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
相關(guān)PDF資料
PDF描述
T107B1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT08; No. of Contacts:36; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Right Angle Plug
T10A6CI Bi-Directional Triode Thyristor 10A Mold Triac(AC Power Control Application)(10A三端雙向可控硅開關(guān)元件(交流電源應用))
T110A105J050MSC TANTALUM HERMETICALLY SEALED / AXIAL
T110A105J050PSC TANTALUM HERMETICALLY SEALED / AXIAL
T110A105J050RSC TANTALUM HERMETICALLY SEALED / AXIAL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T106D11 功能描述:SCR 400V 4A 200UA TO202 Sen Scr RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
T106D2 功能描述:SCR 400V 4A 200uA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
T106D21 功能描述:SCR 400V 4A 200UA TO202 Sen Scr RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
T106D4 功能描述:SCR 400V 4A 200uA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
T106D41 功能描述:SCR 400V 4A 200UA TO202 Sen Scr RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube