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參數(shù)資料
| 型號： | T0930-TJT |
| 廠商： | TEMIC SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | SiGe Power Amplifier for CW Applications |
| 中文描述： | 880 MHz - 935 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PSSOP-16 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 144K |
| 代理商： | T0930-TJT |
5
T0930
4722A–SIGE–06/03
Electrical Characteristics for 2 W Application
V
CC
= V
CC1
, ... , V
CC3
, V
CC, CTL
= +3.2 V, V
CTL
= 1.9 V, T
amb
= +25°C, 50- input and 50- external output match
No.
Parameters
Test Conditions
5
Power Supply
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
5.1
Supply voltage
V
CC
2.6
3.2
3.6
V
A
5.2
Current consumption in
active mode
P
out
= 33 dBm
PAE = 47%
I
1.33
A
A
5.3
Current consumption
(leakage current)
in power-down mode
RF Input
V
CTL
0.2 V
I
10
μA
A
6
6.1
Frequency range
Input impedance
(1)
f
in
Z
i
P
in
880
900
935
MHz
A
6.2
50
C
6.3
Input power
5
12
dBm
C
6.4
Input VSWR
(1)
P
in
= 0 to 12 dBm
P
out
= 30 dBm
2:1
C
7
RF Output
Output impedance
(1)
7.1
Z
o
50
C
7.2
Output power in normal
conditions
P
in
= 5 dBm, R
L
= R
G
= 50
V
CC
= 3.2 V, T
amb
= +25 C
V
CC
= 2.2 V, T
amb
= +25 C
V
CTL
= 0.3 V
V
CC
= 3.2 V, P
out
= 27 dBm
Temp = -25 to + 85 C
no spurious -60 dBc
P
out
P
out
33
30
dBm
dBm
A
7.3
Minimum output power
- 20
dBm
A
7.4
Power-added efficiency
PAE
47
%
A
7.5
Stability
VSWR
10:1
C
7.6
Load mismatch
(stable, no damage)
P
out
= 33 dBm, all phases
VSWR
10:1
C
7.7
Second harmonic
distortion
2fo
-35
dBc
A
7.8
Third harmonic distortion
3fo
-35
dBc
A
7.9
Noise power
f = 925 to 935 MHz
f 935 MHz
P
out
= 33 dBm
RBW = 100 kHz
-73
-85
-70
-82
dBm
dBm
C
7.10 Rise and fall time
0.5
μs
A
7.11
Isolation between input
and output
Power Control
P
in
= 0 to 10 dBm
V
CTL
0.2 V (power down)
50
dB
C
8
8.1
Control curve
Pout 25 dBm
150
dB/V
C
8.2
Power control range
V
CTL
= 0.3 to 2.0 V
50
dB
C
8.3
Control voltage range
V
CTL
I
CTL
0.3
2.0
V
A
8.4
Control current
P
in
= 0 to 10 dBm, V
CTL
= 0 to 2.0 V
200
μA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. With external matching (see “Application Circuit”).
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