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參數(shù)資料
| 型號： | T0812xH |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Standard Triacs(標(biāo)準(zhǔn)雙向可控硅) |
| 中文描述： | 標(biāo)準(zhǔn)雙向（標(biāo)準(zhǔn)雙向可控硅） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | T0812XH |
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
180
O
= 180
o
= 120
o
= 90
o
o
= 60
= 30
o
T(RMS)
I
(A)
P (W)
Fig.1 :
Maximum RMS power dissipation versus
RMS on-state current.
0
10 20 30 40 50 60 70 80 90 100 110120 130
0
2
4
6
8
10
= 180
o
Tcase( C)
I
(A)
T(RMS)
Fig.3:
RMSon-statecurrentversuscasetempera-
ture.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40
-20
0
20
40
60
80
100
120 140
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
Fig.5:
Relativevariationof gatetriggercurrent and
holdingcurrent versus junction temperature.
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
-95
-100
-105
-110
-115
-120
-125
P (W)
Tamb ( C)
Tcase ( C)
o
Rth = 0 C/W
2.5 C/W
5 C/W
7.5 C/W
Fig.2 :
Correlationbetweenmaximum RMS power
dissipation and maximum allowable temperature
(Tamb andTcase)fordifferentthermalresistances
heatsink+ contact.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 :
Relative variation of thermal impedance
versuspulse duration.
1
10
100
1000
0
10
20
30
40
50
60
70
Tj initial = 25 C
Number of cycles
I
(A)
TSM
Fig.6 :
Non repetitivesurge peak on-state current
versusnumber of cycles.
T0810xH / T0812xH
3/5
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