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參數資料
| 型號： | T0610xH |
| 廠商： | 意法半導體 |
| 英文描述： | Standard Triacs(標準雙向可控硅) |
| 中文描述： | 標準雙向（標準雙向可控硅） |
| 文件頁數： | 2/5頁 |
| 文件大小： | 61K |
| 代理商： | T0610XH |
P
G (AV)
= 1W P
GM
=10 W (tp = 20
μ
s)
I
GM
= 4 A (tp = 20
μ
s)
GATE CHARACTERISTICS
(maximumvalues)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junctionto ambient
60
°
C/W
Rth(j-c)
Junctionto case for D.C
4
°
C/W
Rth(j-c)
Junctionto case for A.C 360
°
conductionangle(F=50Hz)
3
°
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Quadrant
Sensitivity
Unit
10
12
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
I-II-III-IV
MAX
25
50
mA
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
I-II-III-IV
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
°
C
I-II-III-IV
MIN
0.2
V
tgt
V
D
=V
DRM
I
T
= 8.5A
dI
G
/dt = 3A/
μ
s
I
G
= 500mA
Tj= 25
°
C
I-II-III-IV
TYP
2
μ
s
I
H
*
I
T
= 250mA Gateopen
Tj= 25
°
C
MAX
25
50
mA
I
L
I
G
= 1.2I
GT
Tj= 25
°
C
I-III-IV
TYP
25
50
mA
II
TYP
50
100
V
TM
*
ITM=8.5A tp= 380
μ
s
Tj= 25
°
C
MAX
1.65
V
I
DRM
I
RRM
V
D
=V
DRM
V
R
=V
RRM
Tj= 25
°
C
MAX
5
μ
A
Tj= 110
°
C
MAX
2
mA
dV/dt*
VD=67%V
DRM
Gate open
Tj= 110
°
C
MIN
200
500
V/
μ
s
(dV/dt)c*
(dI/dt)c = 2.7 A/ms
Tj= 110
°
C
MIN
2
5
V/
μ
s
* Foreither polarity of electrode A
2
voltagewith referenceto electrode A
1
ELECTRICALCHARACTERISTICS
ORDERING INFORMATION
T
06
10
M
H
TRIAC MESAGLASS
CURRENT
PACKAGE:
H =TO220 Non-insulated
VOLTAGE
SENSITIVITY
T0610xH / T0612xH
2/5
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