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參數(shù)資料
| 型號： | SYS32512LKXA-012 |
| 英文描述： | 512 K x 32 Static RAM |
| 中文描述： | 512畝× 32靜態(tài)RAM |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 270K |
| 代理商： | SYS32512LKXA-012 |
Issue 5.0 June 1999
PAGE 7
Valid Data
Address
/OE
/CS
Data In
Data Out
t
WC
t
AW
t
WR(5)
t
CW(3)
t
AS(4)
t
WP(2)
t
DW
t
DH
t
OHZ(6)
High Z
High Z(8)
/WE
NOTES
(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low /CS and /WE. A write begins at the latest transition /CS going low and /WE going low ;
A write ends at the earliest transition /CS going high or /WE going high. t
WP
is measured from the beginning of write to the end of
write.
3. t
CW
is measured from the later of /CS going low to end of write.
4. t
AS
is measured from the address valid to the beginning of write.
5. t
is measured from the end of write to the address change. t
applied in case a write ends as /CS or /WE going high.
6. If OE, /CS and /WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If /CS goes low simultaneously with /WE going or after /WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10. When /CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
11 ./CS=/CS1~4
Write Cycle 1
(/OE = Clock)
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| SYS32512LKXA-015 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:512 K x 32 Static RAM |
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| SYS32512LKXAI-012 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:512 K x 32 Static RAM |
| SYS32512LKXAI-015 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:512 K x 32 Static RAM |
| SYS32512ZK-010 | 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:512 K x 32 Static RAM |
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