Precision Edge SY10H841L SY100H841L Micrel, Inc. M9999-032906 hbwhelp@micrel.com or (408) 955-1690
參數(shù)資料
型號(hào): SY100H841LZH
廠商: Micrel Inc
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 0K
描述: IC CLK BUFFER 1:4 160MHZ 16-SOIC
標(biāo)準(zhǔn)包裝: 47
系列: Precision Edge®
類(lèi)型: 扇出緩沖器(分配)
電路數(shù): 1
比率 - 輸入:輸出: 1:4
差分 - 輸入:輸出: 是/是
輸入: PECL
輸出: TTL
頻率 - 最大: 160MHz
電源電壓: 3 V ~ 3.6 V
工作溫度: 0°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 16-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 管件
4
Precision Edge
SY10H841L
SY100H841L
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
10H ECL DC ELECTRICAL CHARACTERISTICS(1)
VT = VE = +3.0V to +3.6V
TA = 0
°CTA = +25°CTA = +85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
175
175
A—
IIL
Input LOW Current
0.5
0.5
0.5
A—
VIH
Input HIGH Voltage
2.130
2.460
2.170
2.490
2.240
2.580
V
VE = 3.3V
VIL
Input LOW Voltage
1.350
1.820
1.350
1.820
1.350
1.855
V
VE = 3.3V
VBB
Output Reference Voltage
1.920
2.030
1.950
2.050
1.990
2.110
V
VE = 3.3V
Note:
1. ECL VIH, VIL and VBB are referenced to VCCE and will vary 1:1 with the power supply. The levels shown are for IVT = IVO = VCCE = +3.3V.
VT = VE = +3.0V to +3.6V
TA = 0
°CTA = +25°CTA = +85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
175
175
A—
IIL
Input LOW Current
0.5
0.5
0.5
A—
VIH
Input HIGH Voltage
2.135
2.420
2.135
2.420
2.135
2.420
V
VE = 3.3V
VIL
Input LOW Voltage
1.490
1.825
1.490
1.825
1.490
1.825
V
VE = 3.3V
VBB
Output Reference Voltage
1.920
2.040
1.920
2.040
1.920
2.040
V
VE = 3.3V
100H ECL DC ELECTRICALCHARACTERISTICS(1)
Note:
1. ECL VIH, VIL and VBB are referenced to VCCE and will vary 1:1 with the power supply. The levels shown are for IVT = IVO = VCCE = +3.3V.
VT = VE = +3.0V to +3.6V
TA = 0
°CTA = +25°CTA = +85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
tPLH
Propagation Delay
Q0–Q3
2.2
3.2
2.1
3.1
2.0
3.0
ns
CL = 20pF
tPHL
D to Output
tskpp
Part-to-Part Skew(1,4)
Q0–Q3
0.5
0.5
0.5
ns
CL = 20pF
tskew++
Within-Device Skew(2,4)
Q0–Q3
0.3
0.3
0.3
ns
CL = 20pF
tskew– –
Within-Device Skew(3,4)
Q0–Q3
0.3
0.3
0.3
ns
CL = 20pF
tPLH
Propagation Delay
Q0–Q3
2.2
3.2
2.1
3.1
2.0
3.0
ns
CL = 20pF
tPHL
LEN to Q
tPLH
Propagation Delay
Q0–Q3
2.2
3.2
2.1
3.1
2.0
3.0
ns
CL = 20pF
tPHL
EN to Output
tr
Output Rise/Fall Time
Q0–Q3
1.5
1.5
1.5
ns
CL = 20pF
tf
1.0V to 2.0V
fMAX
Max. Input Frequency(5,6)
Q0–Q3
160
160
160
MHz
CL = 20pF
Pulse Width
Q0–Q3
1.5
1.5
1.5
ns
Recovery Time EN
Q0–Q3
1.0
1.0
1.0
ns
tS
Set-up Time D, EN
Q0–Q3
0.75
0.75
0.75
ns
tH
Hold Time D, EN
Q0–Q3
0.75
0.75
0.75
ns
AC CHARACTERISTICS
Notes:
1. Device-to-Device Skew considering HIGH-to-HIGH transitions at common
VCC level.
2. Within-Device Skew considering HIGH-to-HIGH transitions at common
VCC level.
3. Within-Device Skew considering LOW-to-LOW transitions at common
VCC level.
4. All skew parameters are guaranteed but not tested.
5. Frequency at which output levels will meet a 0.8V to 2.0V minimum swing.
6. The fMAX value is specified as the minimum guaranteed maximum
frequency. Actual operational maximum frequency may be greater.
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