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參數(shù)資料
| 型號(hào)： | SXT3904 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon Switching Transistor |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | SXT3904 |
Semiconductor Group
2
SXT 3904
Electrical Characteristics
at
T
= 25 C, unless otherwise specified.
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA
Collector-base breakdown voltage
I
C
= 10
μ
A
Emitter-base breakdown voltage
I
E
= 10
μ
A
Collector-base cutoff current
V
CB
= 30 V
Collector-emitter cutoff current
V
CE
= 30 V,
V
BE
= 3 V
V
(BR)CE0
40
–
–
V
(BR)CB0
60
–
–
V
(BR)EB0
6
–
–
nA
I
CB0
–
–
50
–
DC current gain
I
C
= 100
μ
A
, V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA
, I
B
= 1 mA
I
C
= 50 mA
, I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA
, I
B
= 1 mA
I
C
= 50 mA
, I
B
= 5 mA
h
FE
40
70
100
60
30
–
–
–
–
–
–
–
300
–
–
V
V
CEsat
–
–
–
–
0.2
0.3
V
BEsat
0.65
–
–
–
0.85
0.95
I
CEV
–
–
50
1)
Pulse test conditions:
t
≤
300
μ
s,
D
≤
2 %.
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