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參數資料
| 型號： | SXT2907A |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Silicon Switching Transistor |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 2/6頁 |
| 文件大小： | 177K |
| 代理商： | SXT2907A |
Semiconductor Group
2
SXT 2907 A
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA
Collector-base breakdown voltage
I
C
= 10
μ
A
Emitter-base breakdown voltage
I
E
= 10
μ
A
Collector-base cutoff current
V
CB
= 60 V,
I
E
= 0
V
CB
= 60 V,
I
E
= 0,
T
A
= 125 C
Collector cutoff current
V
CE
= 30 V,
V
BE
= 0.5 V
V
(BR)CE0
60
–
–
V
(BR)CB0
60
–
–
V
(BR)EB0
5
–
–
nA
μ
A
nA
I
CB0
–
–
–
–
–
–
10
10
50
–
DC current gain
I
C
= 100
μ
A,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
Collector-emitter saturation voltage
1)
I
C
= 150 mA
, I
B
= 15 mA
I
C
= 500 mA
, I
B
= 50 mA
Base-emitter saturation voltage
1)
I
C
= 150 mA
, I
B
= 15 mA
I
C
= 500 mA
, I
B
= 50 mA
h
FE
75
100
100
100
50
–
–
–
–
–
–
–
–
300
–
V
V
CEsat
–
–
–
–
0.4
1.6
V
BEsat
–
–
–
–
1.3
2.0
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
Base cutoff current
V
CE
= 30 V,
V
BE
= 3 V
I
EB0
–
–
10
I
CEX
I
BL
–
–
50
1)
Pulse test conditions:
t
≤
300
μ
s,
D
≤
2 %.
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