
Product Description
1
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
http://www.sirenza.com
EDS-102231 Rev C
0
5
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850 MHz
1960 MHz
2140 MHz
2450 MHz
OIP3
P1dB
Gain
SXA-389
400-2500 MHz W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
On-chip Active Bias Control, Single 5V Supply
High Output 3rd Order Intercept:
+42 to +44 dBm typ.
High P1dB : +25 dBm typ.
High Gain: +19 dB at 850 MHz
High Efficiency: consumes only 600 mW
Patented High Reliability GaAs HBT Technology
Surface-Mountable Power Plastic Package
Applications
W-CDMA, PCS, Cellular Systems
High Linearity IF Amplifiers
Multi-Carrier Applications
Sirenza Microdevices’ SXA-389 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 400-2500 MHz
cellular, ISM, WLL, PCS, W-CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
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