
Product Description
Sirenza Microdevices’ SXA-3318B amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in a low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
1
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
303 South Technology Ct., Broomfield, CO 80021
http://www.sirenza.com
EDS-103164 Rev A
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SXA-3318B
400-2500 MHz
Balanced W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
On-chip Active Bias Control
Balanced for excellent input/output VSWR and
minimized reflections
High OIP3 : +47 dBm typ.
High P1dB : +28 dBm typ.
Patented High Reliability GaAs HBT Technology
Surface-Mountable Power Plastic Package
Applications
W-CDMA, PCS, Cellular Systems
High Linearity IF Amplifiers
Multi-Carrier Applications
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 400-2500 MHz
cellular, ISM, WLL, PCS, W-CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
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