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參數(shù)資料
| 型號(hào)： | SWD-109 |
| 英文描述： | Silicon Rectifier Diodes |
| 中文描述： | 單/四驅(qū)動(dòng)程序砷化鎵場效應(yīng)管開關(guān)和衰減 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 122K |
| 代理商： | SWD-109 |
Symbol
Parameter
Min.
Max.
Unit
V
CC
V
EE
V
OPT
Positive DC Supply Voltage
-0.5
5.5
V
Negative DC Supply Voltage
-9.0
0.5
V
Optional DC Output Supply Voltage
-0.5
2.0
V
V
OPT
- V
EE
V
CC
- V
EE
V
I
I
I
V
O
V
O
T
STG
Output to Negative Supply Voltage Range
-0.5
9.0
V
Positive to Negative Supply Range
-0.5
14.5
V
DC Input Voltage
-0.5
V
CC
+ 0.5
25
V
DC Input Current
-25
mA
DC Output Voltage
V
EE
- 0.5
-25
V
OPT
+ 0.5
25
V
DC Output Current
mA
Storage Temperature
-65
150
°C
Single/Quad Drivers for GaAs FET Switches and Attenuators
SWD-109/119
V2.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
I
Asia/Pacific: Tel. +85 2 2111 8088
Fax +85 2 2111 8087
I
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
2
Specifications Subject to Change Without Notice.
Absolute Maximum Ratings
Limits
Typ.
Symbol
Parameter
Test Conditions
Units
Min.
Max.
V
IH
V
IL
V
OH
Input HIGH Voltage
Guaranteed HIGH Input Voltage
V
2.0
1.5
Input LOW Voltage
Guaranteed LOW Input Voltage
V
1.5
0.8
Output HIGH Voltage
I
OH
= -1 mA
V
EE
= Max
V
V
OPT
- 0.1
V
OL
Output LOW Voltage
I
OL
= 1 mA
V
EE
= Max
V
V
EE
+ 0.1
I
IN
Input Leakage Current
V
IN
= V
CC
or GND
V
EE
= Min
μ
A
-1.0
0
1.0
I
CC
Quiescent Supply Current
V
CC
= Max
V
OPT
= Min or Max
V
EE
= Min
V
IN
= V
CC
or GND
μ
A
100
I
CC
Additional Supply Current,
per TTL Input pin
V
CC
= Max
V
IN
= V
CC
- 2.1 V
mA
1.0
DC Characteristics Over Guaranteed Operating Range
All voltage are referenced to GND. All inputs and outputs incorporate latch-up protection structures.
10%
+
+
+
+
+
+
+
+
+
+
INPUT
LEVEL
(3V)
OUTPUT
A OR B
TPLH
TPHL
TTLH
TTHL
90%
1.3 V
90%
50%
10%
LOGIC
"I"
LOGIC
"O"
Tfall
6ns
Trise
6ns
Switching Waveforms
2. V
is grounded for most applications. To improve the intermodulation performance and the 1dB compression point of GaAs control devices at
low frequencies, V
can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate
performance at 500 MHz. It should be noted that the control currents on the GaAs MMICs will increase when positive controls are applied.
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PDF描述 |
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| SWD-109PINRTR | Silicon Rectifier Diodes |
| SWD-109PINTR | Silicon Rectifier Diodes |
| SWD-119 | Silicon Rectifier Diodes |
| SWD-119PINRTR | Silicon Rectifier Diodes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SWD-109119 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Single/Quad Drivers for GaAs FET Switches and Attenuators |
| SWD-109PIN | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Single Driver for GaAs FET Switches and Attenuators |
| SWD-109-PIN | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Single Driver for GaAs FET Switches and Attenuators |
| SWD-109PINRTR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Switch Driver |
| SWD-109PINTR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Switch Driver |
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