
Rev. 5.00
SWAF3L
3. Absolute Maximum Ratings
(
Ta = 25°C)
Parameter
Symbol
Value
Unit
Power Dissipation
Pd*1
280
mW
Forward Current
IF
80
mA
Peak Forward Current
IFM*2
200
mA
Reverse Voltage
VR
5
V
Operating Temperature
Topr
-30 ~ +85
°C
Storage Temperature
Tstg
-40 ~ +100
°C
Thermal Resistance
(junction to solder)
R
Θj-s
70
°C/W
Junction Temperature
Tj max
125
°C
*1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product.
*2
IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10
4. Electro-Optical Characteristics
(
Ta = 25°C)
Item
Symbol
Condition
Min
Typ
Max
Unit
Forward Voltage
VF
IF = 20 mA/CHIP
2.9
3.2
3.6
V
Reverse Current
IR
VR = 5 V
-
100
A
Thermal Resistance(Junction to solder)
R
Θj-s
IF = 20 mA/CHIP
70
℃
/W
Rank M1
4100
-
4400
Rank M4
4400
-
4700
Rank M7
4700
-
5000
Rank N0
5000
-
5300
Luminous Intensity*1
Rank N3
IV
IF = 60 mA
5300
-
5600
mcd
Viewing Angle *2
2
θ1/2
IF = 60 mA
120
x
0.264
-
0.296
Rank b
y
0.248
-
0.295
x
0.287
-
0.311
Rank e
y
0.276
-
0.315
x
0.307
-
0.330
Color Coordinates *3
Rank f
y
IF = 60 mA
0.294
-
0.339
-
Life Time*4
Ta =25℃, IF=20 mA/CHIP
15000 hrs
-
*1 The luminous intensity
IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%.
*2
θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*3 Measurement Uncertainty of the Color Coordinates is
±0.01
*4 Estimated time to 50% degradation of initial luminous intensity.(A chip = 20mA)
*
Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul
Semiconductor.
SEOUL SEMICONDUCTOR CO., LTD.
3
SSC-QP-7-03-44()