參數(shù)資料
型號： SW65-0314-TR
英文描述： Silicon Rectifier Diodes
中文描述： 砷化鎵SP4T吸收開關(guān)與ASIC驅(qū)動DC3.0吉赫
文件頁數(shù)： 2/2頁
文件大?。?/td> 43K
代理商： SW65-0314-TR
GaAs SPST Absorptive Switch with ASIC Driver DC - 3.0 GHz
SW65-0014
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 3.00
Pin Configuration
Parameter
1 dB Compression
Test Conditions
.05 GHz
.5 - 3.0 GHz
Two tone inputs 0.05 GHz
up to +5 dBm 0.5 - 3.0 GHz
—
—
V
CC
= +5.0V
V
EE
= -5.0V
I
in
= 20μA max
I
in
= 20μA max
Units
dBm
dBm
dBm
dBm
V
V
mA
mA
V
V
Min
—
—
—
—
+4.5
-8.0
—
—
0.0
2.0
Typical
+20
+27
+35
+46
+5.0
-5.0
—
—
—
—
Max
—
—
—
—
+5.5
-4.75
4
-1
0.8
5.0
Input IP
3
V
CC
V
EE
I
CC
I
EE
Logic “0”
Logic “1”
Absolute Maximum Ratings
3,4
Parameter
Absolute Maximum
Max. Input Power
0.05 GHz
0.5 - 3.0 GHz
+27 dBm
+34 dBm
Bias Voltages
V
EE
V
CC
Control Voltage
-8.5V
+5.5V
-0.5V to V
CC
+0.5V
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +125°C
Electrical Specifications: T
A
= +25°C
TTL Control Input
C1
1
0
2. Decoupling capacitors (.01 μF) are required on the power supply
lines.
3. Operation of this device above any one of these parameters may
cause permanent damage.
4. When the RF input is applied to the terminated port, the absolute
maximum power is +30 dBm.
RF Common To:
RF1
On
Off
Truth Table
Pin #
1
2
3
4
5
6
7
8
9
10
11
12
Function
RFc
GND
GND
GND
GND
GND
GND
V
EE
GND
V
CC
GND
GND
Pin #
13
14
15
16
17
18
19
20
21
22
23
24
Function
C1
GND
GND
GND
GND
GND
RF1
GND
GND
GND
GND
GND
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