參數(shù)資料
型號: SW-314
英文描述: GaAs SP4T Absorptive Switch, DC - 3 GHz
中文描述: 砷化鎵SP4T吸收開關,直流- 3千兆赫
文件頁數(shù): 1/3頁
文件大小: 229K
代理商: SW-314
GaAs S P4T Absorptive S witc h,
DC - 3 GHz
S
CR-14
V 4.00
Features
I
Integral TTL Driver
I
Isolation: 50 dB Typ. At 1 GHz
I
Ultra Low DC Power Consumption
I
Hermetic Surface Mount Package
I
50 Ohms Nominal Impedance
I
MIL-STD-883 Screening Available
Description
M/A-COM’s SW-314 is a GaAs MMIC SP4T absorptive
switch with an integral silicon ASIC driver. This
device is in a 24-lead ceramic surface mount package.
These switches exhibit excellent performance from DC to 3
GHz, with very low DC power dissipation. The
SW-314 is ideally suited for RF/IF communications
applications. Environmental screening is available.
Contact the factory for information.
Electrical Specifications
1,2
(From –55°C to +85°C)
Parameter
Test Conditions
Frequency
Units
Min
Typ
Max
Insertion Loss
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
dB
dB
dB
dB
1.3
1.4
1.6
1.8
Isolation
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
dB
dB
dB
dB
50
40
35
30
VSWR
RFC, RF1 - RF4 (On)
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
Ratio
Ratio
Ratio
Ratio
1.6:1
1.6:1
1.6:1
1.8:1
VSWR
RF1 - RF4 (Off)
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
Ratio
Ratio
Ratio
Ratio
1.3:1
1.5:1
1.9:1
2.4:1
Trise, Tfall
10% to 90%
ns
7
Ton, Toff
50% Control to 90% / 10% RF
ns
25
Transients
In-Band (peak-peak)
mV
20
1 dB Compression
Input Power
0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm
+20
+27
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.
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