參數(shù)資料
型號: SW-281PIN
英文描述: Schottky Barrier Diodes
中文描述: 肖特基勢壘二極管
文件頁數(shù): 1/2頁
文件大?。?/td> 92K
代理商: SW-281PIN
V 2.00
F e a u e s
Low Insertion Loss, 0.5 dB Ty p a
M n a u e Relay Replacement, 0.250” Sq. Pkg.
Fast Switching Speed, 4 ns Ty p a
Ultra Low DC Power Consumption
G
Guaranteed Specifications *
( F om -55°C to +85°C)
F e q u e n cy Range
I n s e tion Loss
DC - 4 GHz
1.2 dB Max
0.8 dB Max
0.7 dB Max
0.6 dB Max
1.8:1 Max
1.5:1 Max
1.2:1 Max
1.2:1 Max
20 dB Min
30 dB Min
40 dB Min
50 dB Min
DC-4 GHz
DC-2 GHz
DC-1 GHz
DC-0.5 GHz
DC-4 GHz
DC-2 GHz
DC-1 GHz
DC-0.5 GHz
DC-4 GHz
DC-2 GHz
DC-1 GHz
DC-0.5 GHz
V S W R
I s o a o n
Operating Characteristics
I m p e d a n c e
S w ching Characteristics
Tri s e, T all (10/90% or 90/10% RF)
Ton, Toff (50% Control to 90/10% RF)
Transients (In-Band)
Input Power for 1 dB Compression
Control Voltages (Vdc)
0.5 to 4 GHz
0.05 GHz
Intermodulation Intercept Po n
( or two-tone input power up to +5 dBm)
Intercept Po n s
0.5 to 4 GHz
0.05 GHz
C o n ol Vo ages (Complementary Logic)
VI NL ow
VI NH
-5V @ 10 μA Typ to -8V @ 100 μA Max
E nv o n m e n a
See Appendix for MIL-STD-883 screening option.
*
All specifications apply with 50 ohm impedance connected to all RF port s
with 0 and -5 Vdc control vo a g e s.
Faster switching speed can be achieved with enhanced dri ver wave o m
* When an RF output is ‘ o ’ it is shorted to ground through an ‘ o n
shunt MESFET.
50 Ohms Nominal
2 ns Ty p
4 ns Ty p
15 mV Ty p
0 5
+ 2 7
+ 2 1
0 8
+ 3 3
+ 2 6
dBm Ty p
dBm Ty p
I P2
+ 6 8
+ 6 2
I P3
+ 4 8
+ 4 5
dBm Ty p
dBm Ty p
0 to -0.2 V @ 5 μA Max
GaAs DPDT Switch
DC-4 GHz
C R 4
G
G
G
SW-281
Bottom of Case is AC Ground.
Dimensions in ( ) are in mm.
Unless Otherwise Noted:.xxx = ±0.010 (.xx = ±0.25)
.xx = ±0.02 (.x = ±0.5)
O dering Info m a o n
Model No.
S W-281 PIN
Pa ck age
C e a m c
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