
High Power GaAs SPDT Switch 
DC - 3.0 GHz 
SW-276  
M/A-COM Inc. and its affiliates reserve the right to make changes to the 
product(s) or information contained herein without notice. M/A-COM makes 
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability 
whatsoever arising out of the use or application of any product(s) or  
information. 
  
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Tel: 800.366.2266 / Fax: 978.366.2266 
  
Europe  
Tel: 44.1908.574.200 / Fax: 44.1908.574.300 
  
Asia/Pacific
  Tel: 81.44.844.8296 / Fax: 81.44.844.8298 
Visit www.macom.com
for additional data sheets and product information. 
V3  
2 
RoHS  
Compliant 
Electrical Specifications:  T
A
 = -55 to +85°C, Z
0
 = 50 
Ω
7,8
Parameter 
Test Conditions 
Units 
Min. 
Typ. 
Max. 
Insertion Loss 
DC - 0.5 GHz 
DC - 1.0 GHz 
DC - 2.0 GHz 
DC - 3.0 GHz 
dB 
dB 
dB 
dB 
— 
— 
— 
— 
0.4 
0.5 
0.7 
0.9 
0.5 
0.65 
0.8 
1.0 
Isolation 
DC - 0.5 GHz 
DC - 1.0 GHz 
DC - 2.0 GHz 
DC - 3.0 GHz 
dB 
dB 
dB 
dB 
37 
31 
24 
19 
— 
— 
— 
— 
— 
— 
— 
— 
VSWR 
DC - 0.5 GHz 
DC - 1.0 GHz 
DC - 2.0 GHz 
DC - 3.0 GHz 
Ratio 
Ratio 
Ratio 
Ratio 
— 
— 
— 
— 
— 
— 
— 
— 
1.3:1 
1.5:1 
1.5:1 
1.6:1 
Trise, Tfall 
10% to 90% RF, 90% to 10% RF 
nS 
— 
30 
— 
Ton, Toff 
50% control to 90% RF, and 50% control to 10% RF 
nS 
— 
35 
— 
Transients 
In Band 
mV 
— 
12 
— 
Input Power for P0.1dB 
0.9 GHz (-5 V Control) 
0.9 GHz (-8 V Control) 
dBm 
dBm 
— 
— 
32 
35 
— 
— 
Third Order Intercept Point 
Two +10 dBm Input tones 
0.9 GHz (-5 V Control) 
0.9 GHz (-8 V Control) 
dBm 
dBm 
— 
— 
61 
65 
— 
— 
Input Power for P1dB  
0.9 GHz (-5 V Control) 
0.9 GHz (-8 V Control) 
dBm 
dBm 
— 
— 
35 
39 
— 
— 
7. All specifications apply when operated with bias voltages of 0 V for V
IN
 Low and -5 to -10 V for V
IN 
High, and 50 ohm impedance at all RF 
ports, unless otherwise specified. 
8. High power (greater than 1W) handling specifications apply to cold switching only.  For input powers under 1W hot switching can be used. 
Handling Procedures 
Please observe the following precautions to avoid 
damage: 
Static Sensitivity 
Gallium Arsenide Integrated Circuits are sensitive 
to electrostatic discharge (ESD) and can be 
damaged by static electricity.  Proper ESD control 
techniques should be used when handling these 
devices. 
Truth Table
9 
Condition of Switch,  
RF Common to each  
RF Port  
A 
B 
RF1 
RF2 
1 
0 
On 
Off 
0 
1 
Off 
On 
Control 
9. 0 = Low = 0 to -0.2 V @ 20 μA max.,  
1 = High = -5 V @ 50 μA typ. to -10 V @ 800 μA max.