
SVD102
No.5767-1/2
Features
High Q.
High capacitance ratio.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Peak Reverse Voltage
Vrm
30
V
Peak Forward Current
IF
50
mA
Allowable Power Dissipation
PD
500
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--65 to +150
°C
Mounting Temperature
Tm
10s
230
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Voltage
VF
IF=10mA
1.4
V
Reverse Voltage
VR
IR=10A27
V
Reverse Current
IR
VR=25V
100
nA
Interterminal Capacitance
Ct0V
VR=0V, f=1MHz
5
7
pF
Capacitance Ratio
Cj0V / Cj25V VR=0V, 25V, f=1MHz
5
8
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5767B
Package Dimensions
unit : mm
1274B
[SVD102]
90503 TS IM TA-3713 / D2502 TS IM TA-3693 / 90597 GI (KOTO)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Hyperabrupt Junction Type GaAs Varactor Diode
SVD102
X Band VCO, PLO
1 : Cathode
2 : Anode
SANYO : CERC-2
1.35
1.43
1.5
0.1
0.9
0.4
2
1
1.8
0.5