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參數資料
| 型號： | SUT495J |
| 廠商： | AUK Corp |
| 英文描述： | Epitaxial Planar type NPN Silicon Transistor |
| 中文描述： | 外延型NPN硅平面晶體管 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 218K |
| 代理商： | SUT495J |
KST-6037-000
2
SUT495J
Absolute maximum ratings
(Tr1, Tr2 : NPN)
Ta=25
°
C
Characteristic
Symbol
Rating
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
60
50
5
150
150
150
V
V
V
mA
mW
°
C
°
C
-55~150
Electrical Characteristics
(Tr1,Tr2 : NPN)
Ta=25
°
C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=100
μ
A, I
E
=0
60
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
50
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
μ
A, I
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
μ
A
DC current gain
h
FE
V
CE
=6V, I
C
=2mA
70
-
700
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
-
-
0.25
V
Transition frequency
f
T
80
-
-
MHz
Collector output capacitance
C
ob
-
2
3.5
pF
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