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參數(shù)資料
| 型號(hào)： | SUT464M |
| 廠商： | AUK Corp |
| 英文描述： | NPN/PNP Epitaxial Planar Silicon Transistor |
| 中文描述： | npn型/進(jìn)步黨硅外延平面晶體管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | SUT464M |
KST-A007-001
2
SUT464M
Absolute maximum ratings
(Tr1, Tr2)
Ta=25
°
C
Ratings
Tr1
-50
-50
-5
-150
150
150
-55~150
Characteristic
Symbol
Tr2
60
50
5
150
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
V
V
V
mA
mW
°
C
°
C
Electrical Characteristics
(Tr1 : PNP)
Ta=25
°
C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-100
μ
A, I
E
=0
-50
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0
-50
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-10
μ
A, I
C
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
μ
A
DC current gain
h
FE
V
CE
=-6V, I
C
=-2mA
120
-
400
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA,
f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
-
-
-0.3
V
Transition frequency
f
T
80
-
-
MHz
Collector output capacitance
C
ob
-
4
7
pF
Electrical Characteristics
(Tr2 : NPN)
Ta=25
°
C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=100
μ
A, I
E
=0
60
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
50
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
μ
A, I
C
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
μ
A
DC current gain
h
FE
V
CE
=6V, I
C
=2mA
70
-
700
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
-
-
0.25
V
Transition frequency
f
T
80
-
-
MHz
Collector output capacitance
C
ob
-
2
3.5
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUT480H | Epitaxial planar type NPN Silicon Transistor |
| SUT483J | NPN/PNP Epitaxial Planar Silicon Transistor |
| SUT484J | NPN/PNP Epitaxial Planar Silicon Transistor |
| SUT485J | Epitaxial Planar type NPN Silicon Transistor |
| SUT486J | Epitaxial Planar type NPN Silicon Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUT465N | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Dual NPN+PNP complementary Bipolar transistor |
| SUT466N | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Epitaxial planar PNP silicon transistor |
| SUT480H | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Epitaxial planar NPN silicon transistor |
| SUT483J | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN/PNP Epitaxial Planar Silicon Transistor |
| SUT484J | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN/PNP Epitaxial Planar Silicon Transistor |
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