| 品牌 | Infineon | 型號(hào) | IKW75N60T |
| 封裝 | TO-247 | 用途 | L/功率放大 |
| 類型 | 絕緣柵型場(chǎng)效應(yīng)管 | 溝道類型 | N溝道 |
| 導(dǎo)電方式 | 增強(qiáng)型 | | |
IKW75N60T
Description:
Infineon’s TRENCHSTOP? IGBT technology leads to signifICant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and fiLED stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
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Infineon’s TRENCHSTOP? IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench
...
see all
Summary of Features:
- Lowest Vce(sat)drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce(sat)
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits:
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
Target Applications:
總 機(jī):O512-5O71O709
傳 真:O512-5O1112O9
工廠專線:1595O933O5O
貿(mào)易專線:13914994568
Q Q:41086900
E-Mail:master@ksmcu.com
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以上是，Infineon原裝進(jìn)口MOS管75N60 IKW75N60T，品牌:Infineon 型號(hào):IKW75N60T 封裝:TO-247 用途:L/功率放大 類型:絕緣柵型場(chǎng)效應(yīng)管 溝道類型:N溝道 導(dǎo)電方式:增強(qiáng)型的信息