Infineon’s TRENCHSTOP? IGBT technology leads to signifICant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and fiLED stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon’s TRENCHSTOP? IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench

• Lowest V_ce(sat)drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in V_ce(sat)
• Very soft, fast recovery anti-parallel Emitter Controlled Diode
• High ruggedness, temperature stable behavior
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution

• Highest efficiency – low conduction and switching losses
• Comprehensive portfolio in 600V and 1200V for flexibility of design
• High device reliability

• UPS
• Solar Inverters
• Major Home Appliances
• Welding
• Airconditioning
• Industrial Drives
• Other hard switching applications