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參數(shù)資料
| 型號(hào)： | SUP85N10-10 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 100-V (D-S) 175 MOSFET |
| 中文描述： | N溝道100 -五（副）175 MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SUP85N10-10 |
SUP/SUB85N10-10
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71141
S-00172—Rev. A, 14-Feb-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
100
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 80 V, V
GS
= 0 V
1
A
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.0085
0.0105
r
DS(on)
V
GS
= 4.5 V, I
D
=
20 A
0.0010
0.012
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.017
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.022
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
S
Dynamic
b
Input Capacitance
C
iss
6550
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
665
pF
Reverse Transfer Capacitance
C
rss
265
Total Gate Charge
c
Q
g
V
DS
= 50 V V
V
GS
= 10 V, I
D
= 85 A
10 V I
105
160
Gate-Source Charge
c
Q
gs
17
nC
Gate-Drain Charge
c
Q
gd
23
Turn-On Delay Time
c
t
d(on)
V
= 50 ,
= 0 6
85 A V
85 A, V
GEN
= 10 V, R
G
= 2.5
12
25
Rise Time
c
t
r
I
D
10 V R
2 5
90
135
ns
Turn-Off Delay Time
c
t
d(off)
55
85
Fall Time
c
t
f
130
195
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
85
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ s
A di/d
85
140
ns
Peak Reverse Recovery Current
I
RM(REC)
4.5
7
A
Reverse Recovery Charge
Q
rr
0.17
0.35
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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| SUP85N10-10_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175 °C MOSFET |
| SUP85N10-10-E3 | 功能描述:MOSFET 100V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP85N10-10-GE3 | 功能描述:MOSFET 100V 85A 250W 10.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP85N10-10P-GE3 | 功能描述:MOSFET 100V 85A 250W 10.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP85N15-21 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB |
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