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參數(shù)資料
| 型號(hào)： | SUM60N10-17 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 100-V (D-S) 175C MOSFET |
| 中文描述： | N溝道100 -五（副）175C MOSFET的 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | SUM60N10-17 |
SPICE Device Model SUM60N10-17
Vishay Siliconix
www.vishay.com
2
Document Number: 72140
09-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
3.2
V
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 10 V
366
A
V
GS
= 10 V, I
D
= 30 A
0.013
0.013
V
GS
= 6 V, I
D
= 20 A
0.015
0.015
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
°
C
0.024
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
°
C
0.030
Forward Voltage
a
Dynamic
b
V
SD
I
F
= 30 A, V
GS
= 0 V
0.90
1
V
Input Capacitance
C
iss
4377
4300
Output Capacitance
C
oss
482
450
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
239
175
pF
Total Gate Charge
c
Q
g
57
65
Gate-Source Charge
c
Q
gs
25
25
Gate-Drain Charge
c
Q
gd
V
DS
= 50 V, V
GS
= 10 V, I
D
= 60 A
19
19
nC
Turn-On Delay Time
c
t
d(on)
25
15
Rise Time
c
t
r
12
12
Turn-Off Delay Time
c
t
d(off)
17
30
Fall Time
c
t
f
V
DD
= 50 V, R
L
= 1.5
I
D
60 A, V
GEN
= 10 V, R
G
= 2.5
10
10
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/
μ
s
110
125
ns
Notes
a.
b.
c.
Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SUM60N10-17_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175 ∑C MOSFET |
| SUM60N10-17-E3 | 功能描述:MOSFET 100V 60A 150W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N10-17-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUM60ND412LT | 制造商:SILICONIX 功能描述:* |
| SUM60P05-11LT | 功能描述:MOSFET 55V 60A 200W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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