- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365763 > SUM60N06-15 (Vishay Intertechnology,Inc.) N-Channel 60-V (D-S) 175C MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SUM60N06-15 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) 175C MOSFET |
| 中文描述： | N通道60 - V（下局副局長(zhǎng)）175C MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 70K |
| 代理商： | SUM60N06-15 |
SUM60N06-15
Vishay Siliconix
www.vishay.com
2
Document Number: 72080
S-32406—Rev. B, 24-Nov-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
100
A
V
GS
= 10 V, I
D
= 30 A
0.012
0.015
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.025
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.030
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
S
Dynamic
b
Input Capacitance
C
iss
2100
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
pF
Reverse Transfer Capacitance
C
rss
125
Total Gate Charge
c
Q
g
30
45
Gate-Source Charge
c
Q
gs
V
= 30 V,
V
= 10 V, I
= 60 A
DS
GS
11
nC
Gate-Drain Charge
c
Q
gd
D
8
Turn-On Delay Time
c
t
d(on)
10
15
Rise Time
c
t
r
V
= 30 V, R
= 0.5
60 A, V
GEN
= 10 V, R
G
= 2.5
12
20
ns
Turn-Off Delay Time
c
t
d(off)
I
D
20
30
Fall Time
c
t
f
10
15
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
110
A
Pulsed Current
I
SM
300
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
1.1
1.5
V
Reverse Recovery Time
t
rr
I
F
= 60 A, di/dt = 100 A/ s
60 A di/dt 100 A/
50
85
ns
Peak Reverse Recovery Current
I
RM(REC)
2
4
A
Reverse Recovery Charge
Q
rr
0.05
0.17
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUM60N08-07C | Current-Sensing Power MOSFETs |
| SUM60N10-17 | N-Channel 100-V (D-S) 175C MOSFET |
| SUM60P05-11LT | P-Channel 55-V (D-S) MOSFET with Sensing Diode |
| SUM65N20-30 | Power MOSFET |
| SUM70N04-07L | N-Channel 40-V (D-S) 175ºC MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM60N06-15-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 60A 3PIN TO-263 - Rail/Tube |
| SUM60N08-07C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Current-Sensing Power MOSFETs |
| SUM60N08-07T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED) |
| SUM60N10-17 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175C MOSFET |
| SUM60N10-17_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175 ∑C MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。