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參數(shù)資料
| 型號： | SUM60N04-05LT |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S) MOSFET with Sensing Diode |
| 中文描述： | N通道40 - V（下局副局長）MOSFET，具有檢測二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 64K |
| 代理商： | SUM60N04-05LT |
SUM60N04-05LT
Vishay Siliconix
www.vishay.com
2
Document Number: 71747
S-40862—Rev. C, 03-May-04
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 40 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175 C
500
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 60 A
0.0035
0.0045
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0051
0.0065
V
GS
= 10 V, I
D
= 60 A, T
J
= 125 C
0.0069
V
GS
= 10 V, I
D
= 60 A, T
J
= 175 C
0.0086
Sense Diode Forward Voltage
V
FD1
and
FD2
I
F
= 50 A
655
715
I
F
= 25 A
600
660
mV
Sense Diode Forward Voltage Increase
V
F
From I
F
= 25 A to I
F
= 50 A
30
80
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
35
S
Dynamic
b
Input Capacitance
C
iss
6000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1100
pF
Reversen Transfer Capacitance
C
rss
700
Total Gate Charge
c
Q
g
130
Gate-Source Charge
c
Q
gs
V
= 20 V,
V
= 10 V, I
= 25 A
DS
GS
25
nC
Gate-Drain Charge
c
Q
gd
D
40
Turn-On Delay Time
c
t
d(on)
15
20
Rise Time
c
t
r
= 20 V, R
= 0.8
V
DD
20 V, R
L
0.8
25 A, V
GEN
= 10 V, R
= 2.5
80
120
ns
Turn-Off Delay Time
c
t
d(off)
I
D
100
150
Fall Time
c
t
f
g
100
150
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
60
A
Pulsed Current
I
SM
200
Forward Voltage
a
V
SD
I
F
= 60 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
60
90
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 60 A, di/dt = 100 A/ s
F
2.1
4
A
Reverse Recovery Charge
Q
rr
0.065
0.18
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM60N04-05LT-E3 | 功能描述:MOSFET 40V 60A 200W w/Sensing Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N04-05T-E3 | 功能描述:MOSFET 40V 60A 200W w/Sensing Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N04-06T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET with Sensing Diode |
| SUM60N04-06T-E3 | 功能描述:MOSFET 40V 60A 200W w/Sensing Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N04-12LT | 功能描述:MOSFET 40V 60A 110W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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