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參數(shù)資料
| 型號： | SUM110N10-09-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 其它接口 |
| 英文描述： | TERMINAL |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 63K |
| 代理商： | SUM110N10-09-E3 |
SUM110N10-09
Vishay Siliconix
www.vishay.com
2
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
100
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 100 V, V
GS
= 0 V
1
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 100 V, V
GS
= 0 V, T
J
= 200 C
10
mA
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
0.0078
0.0095
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.017
V
GS
= 10 V, I
D
= 30 A, T
J
= 200 C
0.025
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
S
Dynamic
b
Input Capacitance
C
iss
6700
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
750
pF
Reverse Transfer Capacitance
C
rss
280
Total Gate Charge
c
Q
g
110
160
Gate-Source Charge
c
Q
gs
V
= 50 V,
V
= 10 V, I
= 85 A
DS
GS
24
nC
Gate-Drain Charge
c
Q
gd
D
24
Gate Resistance
R
g
1.5
6.2
Turn-On Delay Time
c
t
d(on)
20
30
Rise Time
c
t
r
V
= 50 V, R
= 0.6
85 A, V
GEN
= 10 V, R
g
= 2.5
125
200
ns
Turn-Off Delay Time
c
t
d(off)
I
D
55
85
Fall Time
c
t
f
130
195
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
110
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
70
140
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 50 A, di/dt = 100 A/ s
5.5
10
A
Reverse Recovery Charge
Q
rr
0.19
0.35
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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