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參數(shù)資料
| 型號： | SUM110N03-03P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C MOSFET |
| 中文描述： | N溝道30 V的（副），175C MOSFET的 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 181K |
| 代理商： | SUM110N03-03P |
SPICE Device Model SUM110N03-03P
Vishay Siliconix
www.vishay.com
2
Document Number: 70095
09-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.8
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
1708
A
V
GS
= 10 V, I
D
= 30 A
0.0019
0.0020
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
°
C
0.0026
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0030
0.0031
Forward Voltage
a
Dynamic
b
V
SD
I
F
= 110 A, V
GS
= 0 V
0.93
1.1
V
Input Capacitance
C
iss
11410
12100
Output Capacitance
C
oss
811
1910
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
498
1250
pF
Total Gate Charge
c
Q
g
194
172
Gate-Source Charge
c
Q
gs
40
40
Gate-Drain Charge
c
Q
gd
V
DS
= 15 V, V
GS
= 10 V, I
D
= 110 A
40
22
nC
Turn-On Delay Time
c
t
d(on)
19
20
Rise Time
c
t
r
23
20
Turn-Off Delay Time
c
t
d(off)
50
90
Fall Time
c
t
f
V
DD
= 15 V, R
L
= 0.18
I
D
110 A, V
GEN
= 10 V, R
G
= 2.5
44
25
Source-Drain Reverse Recovery Time
t
rr
I
F
= 85 A, di/dt = 100 A/
μ
s
31
60
ns
Notes
a.
b.
c.
Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM110N03-03P-E3 | 功能描述:MOSFET 30V 110A 375W 2.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N03-04P | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 30V 110A 3-Pin(2+Tab) TO-263 |
| SUM110N03-04P-E3 | 功能描述:MOSFET 30V 110A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N04-02L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) 200 Degree Celcious MOSFET |
| SUM110N04-02L | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
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