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參數(shù)資料
| 型號： | SUF520J |
| 廠商： | AUK Corp |
| 英文描述： | N-Channel Enhancement-Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 307K |
| 代理商： | SUF520J |
KST-6030-000
2
SUF520J
Absolute maximum ratings
( Q1, Q2 Common)
(Ta=25
°
C)
Characteristic
Symbol
Drain-Source voltage
Gate-Source voltage
V
GSS
DC Drain current
Power dissipation
Channel temperature
Storage temperature range
Ratings
20
10
50
200
150
-55~150
Unit
V
V
mA
mW
°
C
°
C
V
DS
I
D
P
D
T
ch
T
stg
*
* : Total rating
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Drian-Source breakdown voltage
BV
DSS
I
D
=100
μ
A, V
GS
=0
20
V
Gate-Threshold voltage
V
th
I
D
=0.1mA, V
DS
=3V
0.5
1.5
V
Drain cut-off current
I
DSS
V
DS
=20V, V
GS
=0
1
μ
A
Gate leakage current
I
GSS
V
GS
=10V, V
DS
=0
1
μ
A
Drain-Source on-resistance
R
DS(ON)
｜
Y
fs
｜
V
GS
=2.5V, I
D
=10mA
20
40
Forward transfer admittance
V
DS
=3V, I
D
=10mA
20
mS
Input capacitance
C
iss
V
DS
=3V, V
GS
=0, f=1MHz
5.5
pF
Output capacitance
C
oss
V
DS
=3V, V
GS
=0, f=1MHz
6.5
pF
Reverse Transfer capacitance
C
rss
V
DS
=3V, V
GS
=0, f=1MHz
V
DD
=3V, I
D
=10mA
V
GEN
=0~2.5V
V
DD
=3V, I
D
=10mA
V
GEN
=0~2.5V
1.6
pF
Turn-on time
t
ON
0.14
Turn-off time
t
OFF
0.14
* Switching Time Test Circuit
=
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