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參數(shù)資料
| 型號： | SUD70N02-04P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175 MOSFET |
| 中文描述： | N溝道20 - V（下副秘書長）175 MOSFET的 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 198K |
| 代理商： | SUD70N02-04P |
SPICE Device Model SUD70N02-04P
Vishay Siliconix
www.vishay.com
2
Document Number: 70109
08-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.2
V
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
1575
A
V
GS
= 10 V, I
D
= 20 A
0.0028
0.0028
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
°
C
0.0031
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0040
0.0047
Forward Voltage
b
Dynamic
a
V
SD
I
S
= 50 A, V
GS
= 0 V
0.91
1.2
V
Input Capacitance
C
iss
4503
4500
Output Capacitance
C
oss
1550
1520
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
753
800
pF
Total Gate Charge
c
Q
g
37
34
Gate-Source Charge
c
Q
gs
11
11
Gate-Drain Charge
c
Q
gd
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
10
10
nC
Turn-On Delay Time
c
t
d(on)
14
15
Rise Time
c
t
r
11
11
Turn-Off Delay Time
c
t
d(off)
16
35
Fall Time
c
t
f
V
DD
= 10 V, R
L
= 0.20
I
D
50 A, V
GEN
= 10 V, R
G
= 2.5
16
15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/
μ
s
31
45
ns
Notes
a.
b.
c. Independent of operating temperature.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
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