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參數(shù)資料
| 型號(hào)： | SUD50P04-13L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 40-V (D-S), 175C MOSFET |
| 中文描述： | P通道40 -五（副），175葷MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 59K |
| 代理商： | SUD50P04-13L |
SUD50P04-13L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73009
S-41267—Rev. A, 05-Jul-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
250 A
40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
1.0
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
40 V, V
GS
= 0 V
1
A
V
DS
=
40 V, V
GS
= 0 V, T
J
= 125 C
50
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
10 V
50
A
V
GS
=
10 V, I
D
=
30 A
0.0105
0.013
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
10 V, I
D
=
30 A, T
J
= 125 C
0.020
V
GS
=
4.5 V, I
D
=
20 A
0.017
0.022
Forward Transconductance
a
g
fs
V
DS
=
15 V, I
D
=
30 A
15
S
Dynamic
b
Input Capacitance
C
iss
3120
Output Capacitance
C
oss
V
= 0 V, V
=
25 V, f = 1 MHz
GS
DS
440
pF
Reverse Transfer Capacitance
C
rss
320
Gate Resistance
R
g
f = 1.0 MHz
4.3
Total Gate Charge
c
Q
g
63
95
Gate-Source Charge
c
Q
gs
V
=
20 V,
V
=
10 V, I
=
50 A
DS
GS
13
nC
Gate-Drain Charge
c
Q
gd
D
16
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
=
20 V, R
= 0.4
50 A, V
GEN
=
10 V, R
g
= 2.5
18
30
ns
Turn-Off Delay Time
c
t
d(off)
I
D
60
90
Fall Time
c
t
f
47
70
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
a
V
SD
I
F
=
50 A, V
GS
= 0 V
1.0
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
=
50 A, di/dt = 100 A/ s
36
55
ns
Notes
a.
b.
c.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50P04-13L_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) 175 °C MOSFET |
| SUD50P04-13L_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) 175 ?°C MOSFET |
| SUD50P04-13L-E3 | 功能描述:MOSFET 40V 60A 93.7W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50P04-13L-GE3 | 功能描述:MOSFET 40V 60A 93.7W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50P04-15 | 功能描述:MOSFET 40V 50A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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