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參數(shù)資料
| 型號(hào)： | SUD50P04-09L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel, Tj = 175 °C power MOSFET; low leakage current; |
| 中文描述： | P通道，Tj=175℃，低漏電流 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 44K |
| 代理商： | SUD50P04-09L |
SUD50P04-09L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72243
S-31261—Rev. A, 16-Jun-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -250 A
-40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1
-3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= -32 V, V
GS
= 0 V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -32 V, V
GS
= 0 V, T
J
= 125 C
-50
V
DS
= -32 V, V
GS
= 0 V, T
J
= 175 C
-150
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-50
A
V
GS
= -10 V, I
D
= -24 A
0.0075
0.0094
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -50 A, T
J
= 125 C
0.014
V
GS
= -10 V, I
D
= -50 A, T
J
= 175 C
0.017
V
GS
= -4.5 V, I
D
= -18 A
0.0115
0.0145
Forward Transconductance
a
g
fs
V
DS
= -5 V, I
D
= -24 A
73
S
Dynamic
b
Input Capacitance
C
iss
4800
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
700
pF
Reversen Transfer Capacitance
C
rss
550
Total Gate Charge
c
Q
g
102
150
Gate-Source Charge
c
Q
gs
V
= -20 V,
V
= -10 V, I
= -50 A
DS
GS
18.5
nC
Gate-Drain Charge
c
Q
gd
D
27
Turn-On Delay Time
c
t
d(on)
10
15
Rise Time
c
t
r
= -20 V, R
V
DD
= 20 V, R
L
= 0.4
-50 A, V
GEN
= -10 V, R
= 6
60
90
ns
Turn-Off Delay Time
c
t
d(off)
I
D
145
220
Fall Time
c
t
f
G
140
220
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
-50
A
Pulsed Current
I
SM
-100
Forward Voltage
a
V
SD
I
F
= -50 A, V
GS
= 0 V
-1.0
-1.5
V
Reverse Recovery Time
t
rr
I
F
= -50 A, di/dt = 100 A/ s
55
85
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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| SUD70N02-05P | N-Channel 20-V (D-S) 175C MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50P04-09L_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S), 175 °C MOSFET |
| SUD50P04-09L-E3 | 功能描述:MOSFET 40V 50A 136W 9.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50P04-09L-T4-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK T/R |
| SUD50P04-13L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) 175 °C MOSFET |
| SUD50P04-13L_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) 175 °C MOSFET |
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