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參數(shù)資料
| 型號(hào)： | SUD50N06-16 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) 175 Degreee Celcious MOSFET |
| 中文描述： | N通道60 - V（下副秘書長(zhǎng)）175 Degreee Celcious MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 69K |
| 代理商： | SUD50N06-16 |
SUD50N06-16
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72396
S-31921—Rev. A, 15-Sep-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2.0
4.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 20 A
0.0128
0.016
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.027
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.032
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
20
S
Dynamic
a
Input Capacitance
C
iss
2100
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
300
pF
Reverse Transfer Capacitance
C
rss
125
Gate Resistance
R
g
f = 1 MHz
1.7
Total Gate Charge
c
Q
g
30
45
Gate-Source Charge
c
Q
gs
V
= 30 V,
V
= 10 V, I
= 50 A
DS
GS
11
nC
Gate-Drain Charge
c
Q
gd
D
8
Turn-On Delay Time
c
t
d(on)
10
15
Rise Time
c
t
r
V
= 30 V, R
= 0.6
50 A, V
GEN
= 10 V, R
G
= 2.5
12
20
ns
Turn-Off Delay Time
c
t
d(off)
I
D
20
30
Fall Time
c
t
f
10
15
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
b
V
SD
I
F
= 30 A, V
GS
= 0 V
1.0
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ s
50
85
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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