型號(hào): | SUD50N03-10CP |
廠商: | Vishay Intertechnology,Inc. |
英文描述: | N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized |
中文描述: | N溝道30 V的(副),175度,Celcious,MOSFET的脈寬調(diào)制優(yōu)化 |
文件頁數(shù): | 4/4頁 |
文件大?。?/td> | 80K |
代理商: | SUD50N03-10CP |
相關(guān)PDF資料 |
PDF描述 |
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SUD50P04-09L | P-Channel, Tj = 175 °C power MOSFET; low leakage current; |
SUD50P04-13L | P-Channel 40-V (D-S), 175C MOSFET |
SUD50P04-15 | P-Channel 40-V (D-S), 175C MOSFET |
SUD50P06-15L | P-Channel, Tj = 175 °C power MOSFET; low leakage current; |
SUD70N02-05P | N-Channel 20-V (D-S) 175C MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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SUD50N03-10-E3 | 功能描述:MOSFET 30V 15A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
SUD50N03-10P | 功能描述:MOSFET 30V 50A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
SUD50N03-10P-E3 | 功能描述:MOSFET 30V 50A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
SUD50N03-10-T4 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 15A 3-Pin(2+Tab) DPAK T/R |
SUD50N03-11 | 功能描述:MOSFET 30V 50A 62.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |