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參數(shù)資料
| 型號： | SUD40N04-10A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S), 175C MOSFET |
| 中文描述： | N溝道40五（副），175C MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | SUD40N04-10A |
SUD40N04-10A
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71420
S-03269
—
Rev. A, 26-Mar-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 32 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 32 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 32 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
40
A
V
GS
= 10 V, I
D
= 40 A
0.0075
0.010
V
GS
= 10 V, I
D
= 40 A, T
J
0.012
0.016
V
GS
= 10 V, I
D
= 40 A, T
J
= 175 C
0.015
0.020
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 10 A
0.011
0.014
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 125 C
0.018
0.022
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 175 C
0.022
0.028
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 40 A
20
40
S
Dynamic
b
Input Capacitance
C
iss
1700
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
370
pF
Reversen Transfer Capacitance
C
rss
145
Total Gate Charge
c
Q
g
35
Gate-Source Charge
c
Q
gs
V
= 20 V,
V
= 10 V, I
= 40 A
DS
GS
6
nC
Gate-Drain Charge
c
Q
gd
D
8
Turn-On Delay Time
c
t
d(on)
14
30
Rise Time
c
t
r
V
DD
= 20 V, R
L
= 0.5
40 A, V
GEN
= 10 V, R
= 2.5
7.5
15
Turn-Off Delay Time
c
t
d(off)
I
D
30
60
ns
Fall Time
c
t
f
G
14
30
Source-Drain Ciode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
40
Pulsed Current
I
SM
100
A
Forward Voltage
a
V
SD
I
F
= 40 A, V
GS
= 0 V
1.0
1.50
V
Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ s
30
60
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD40N04-10A | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUD40N04-10A-E3 | 功能描述:MOSFET 40V 40A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD40N06-24 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 37A I(D) | TO-252 |
| SUD40N06-25L | 功能描述:MOSFET 60V 20A 75W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD40N06-25L | 制造商:Vishay Siliconix 功能描述:MOSFET N LOGIC D-PAK |
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