參數(shù)資料
型號: SUD40N02-08
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 20-V (D-S), 175C MOSFET
中文描述: N溝道20五(副),175C MOSFET的
文件頁數(shù): 2/3頁
文件大?。?/td> 179K
代理商: SUD40N02-08
SPICE Device Model SUD40N02-08
Vishay Siliconix
www.vishay.com
2
Document Number: 71017
05-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
0.86
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
339
A
V
GS
= 4.5 V, I
D
= 20 A
0.0065
0.0068
V
GS
= 4.5 V, I
D
= 20 A, T
J
= 125
°
C
0.0106
0.0104
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 20 A
0.012
0.011
Forward Voltage
a
Dynamic
b
V
SD
I
F
= 100 A, V
GS
= 0 V
0.90
1.2
V
Input Capacitance
C
iss
2753
2660
Output Capacitance
C
oss
768
730
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
304
375
pF
Total Gate Charge
c
Q
g
26
26
Gate-Source Charge
c
Q
gs
5
5
Gate-Drain Charge
c
Q
gd
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 40 A
7
7
nC
Turn-On Delay Time
c
t
d(on)
19
20
Rise Time
c
t
r
30
120
Turn-Off Delay Time
c
t
d(off)
76
45
Fall Time
c
t
f
V
DD
= 10 V, R
L
= 0.25
I
D
40 A, V
GEN
= 4.5 V, R
G
= 2.5
49
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/
μ
s
31
35
ns
Notes
a.
b.
c.
Pulse test; pulse width
300
μ
s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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