- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365761 > SUB75N03-04 (Vishay Intertechnology,Inc.) N-Channel 30-V (D-S), 175C MOSFET PDF資料下載
參數(shù)資料
| 型號： | SUB75N03-04 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C MOSFET |
| 中文描述： | N溝道30 V的（副），175葷MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 68K |
| 代理商： | SUB75N03-04 |
SUP/SUB75N03-07
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.006
0.007
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.011
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.015
V
GS
= 4.5 V, I
D
= 20 A
0.01
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
5600
Output Capacitance
C
oss
1100
pF
Reversen Transfer Capacitance
C
rss
450
Total Gate Charge
c
Q
g
V
DS
= 15 V V
V
GS
= 10 V, I
D
= 75 A
10 V I
70
130
Gate-Source Charge
c
Q
gs
18
nC
Gate-Drain Charge
c
Q
gd
10
Turn-On Delay Time
c
t
d(on)
18
30
Rise Time
c
t
r
V
= 15 V, R
= 0.2
DD
75 A, V
GEN
= 10 V, R
G
= 2.5
12
20
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
60
120
Fall Time
c
t
f
22
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
75
A
Pulsed Current
I
SM
200
Forward Voltage
a
V
SD
I
F
= 75 A, V
GS
= 0 V
1.2
1.5
V
Reverse Recovery Time
t
rr
I
F
= 75 A, di/dt = 100 A/ s
55
100
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUB75N05-07 | N-Channel 55-V (D-S), 175C MOSFET |
| SUB75N05-06 | N-Channel 50-V (D-S), 175C MOSFET |
| SUB75N06-12L | N-Channel 60-V (D-S), 175C MOSFET |
| SUP75N06-12L | N-Channel 60-V (D-S), 175C MOSFET |
| SUB75P03-07 | P-Channel 30-V (D-S) 175C MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUB75N03-04-E3 | 功能描述:MOSFET 30V 75A 187W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB75N03-07 | 制造商:VISH 功能描述: 制造商:Vishay Intertechnologies 功能描述: |
| SUB75N04-05L | 功能描述:MOSFET 40V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB75N04-05L-E3 | 功能描述:MOSFET 40V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB75N05-06 | 功能描述:MOSFET 50V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。