參數(shù)資料
型號: SUB65P04-15
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 40-V (D-S) 175C MOSFET
中文描述: P通道40 - V(下局副局長)175C MOSFET的
文件頁數(shù): 2/5頁
文件大?。?/td> 57K
代理商: SUB65P04-15
SUP/SUB65P04-15
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71174
S-00831—Rev. A, 01-May-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –250 A
–40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1
–3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= –40 V, V
GS
= 0 V
–1
V
DS
= –40 V, V
GS
= 0 V, T
J
= 125 C
–50
V
DS
= –40 V, V
GS
= 0 V, T
J
= 175 C
–250
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –10 V
–120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= –10 V, I
D
= –30 A
0.012
0.015
DS(on)
r
V
GS
= –10 V, I
D
= –30 A, T
J
= 125 C
0.024
V
GS
= –10 V, I
D
= –30 A, T
J
= 175 C
0.030
V
GS
= –4.5 V, I
D
= –20 A
0.018
0.023
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –50 A
20
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
0 V V
25 V f
5400
Output Capacitance
C
oss
640
pF
Reversen Transfer Capacitance
C
rss
300
Total Gate Charge
c
Q
g
V
DS
= –20 V V
V
GS
= –10 V, I
D
= –65 A
10 V I
85
130
Gate-Source Charge
c
Q
gs
25
nC
Gate-Drain Charge
c
Q
gd
15
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
= –20 V, R
= 0.3
DD
–65 A, V
GEN
= –10 V, R
G
= 2.5
380
580
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
75
115
Fall Time
c
t
f
140
210
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
–65
A
Pulsed Current
I
SM
–240
Forward Voltage
a
V
SD
I
F
= –65 A, V
GS
= 0 V
–1.2
–1.5
V
Reverse Recovery Time
t
rr
I
F
= –65 A, di/dt = 100 A/ s
65 A di/d
40
80
ns
Peak Reverse Recovery Current
I
RM(REC)
2.0
4
A
Reverse Recovery Charge
Q
rr
0.04
0.1
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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