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參數(shù)資料
| 型號(hào)： | STZTA92 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Medium Power Amplifier(硅平面外延工藝PNP晶體管) |
| 中文描述： | 中等功率放大器（硅平面外延工藝進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | STZTA92 |
THERMAL DATA
R
thj-amb
R
thj-tab
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
Collector-Base
Breakdown Voltage
(IE = 0)
V
CB
= -200 V
-100
nA
V
(BR)CBO
I
C
= -100
μ
A
-300
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
I
C
= -1 mA
-300
V
I
E
= -100
μ
A
-5
V
I
C
= -20 mA I
B
= -2 mA
-0.5
V
I
C
= -20 mA I
B
= -2 mA
-0.9
V
I
C
= -1 mA V
CE
= -10 V
I
C
= -10 mA V
CE
= -10 V
I
C
= -30 mA V
CE
= -10 V
25
40
40
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -20 V f = 50 MHz
50
MHz
C
CEO
Collector Emitter
Capacitance
V
CE
= -20 V f = 1 MHz
50
pF
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1.5 %
STZTA92
2/4
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