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參數(shù)資料
| 型號(hào)： | STZT2907 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Medium Power Amplifier(硅平面外延工藝NPN晶體管) |
| 中文描述： | 中等功率放大器（硅平面外延工藝npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | STZT2907 |
THERMAL DATA
R
thj-amb
R
thj-tab
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max
83.3
10
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
V
CB
= rated V
CBO
T
amb
= 125
o
C
-20
-10
nA
μ
A
nA
I
CEX
Collector Cut-off
Current (V
BE
= 0.5V)
Base Cut-off Current
(V
BE
= 0.5V)
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
CE
= -30 V for
STZT2222A
-50
I
BEX
V
CE
= -30 V for
STZT2222A
-50
nA
V
(BR)CBO
I
C
= -10
μ
A
-60
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA
for
STZT2907
for
STZT2907A
I
E
= -10
μ
A
-40
-60
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
-5
V
V
CE(sat)
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
I
C
= -0.1 mA V
CE
= -10 V
for
STZT2907
for
STZT2907A
I
C
= -1 mA V
CE
= -10 V
for
STZT2907
for
STZT2907A
I
C
= -10 mA V
CE
= -10 V
for
STZT2907
for
STZT2907A
I
C
= -150 mA V
CE
= -10 V
I
C
= -500 mA V
CE
= -10 V
for
STZT2907
for
STZT2907A
-0.4
-1.6
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
-1.3
-2.6
V
V
h
FE
DC Current Gain
35
75
50
100
75
100
100
10
50
300
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -10 V f = 100 MHz
200
MHz
C
CBO
Collector-Base
Capacitance
Emitter-Base
Capacitance
Delay Time
I
E
= 0 V
CB
= -10 V f = 1 MHz
8
pF
C
EBO
I
C
= 0 V
EB
= -2 V f = 1 MHz
30
pF
t
d
t
r
I
C
= -150 mA I
B1
= -15 mA
V
CC
= -30 V
10
ns
Rise Time
40
ns
t
on
Turn-on Time
45
ns
t
s
t
f
t
off
Storage Time
I
C
= -150 mA I
B1
= -I
B1
= -15 mA
V
CC
= -30 V
80
ns
Fall Time
30
ns
Turn-off Time
100
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1.5 %
STZT2907/STZT2907A
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STZT2907A | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| STZT5400 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 600MA I(C) | SOT-223 |
| STZT5401 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEDIUM POWER AMPLIFIER |
| STZT5550 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 600MA I(C) | SOT-223 |
| STZT5551 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 600MA I(C) | SOT-223 |
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