參數(shù)資料
型號： STW8NA80
廠商： 意法半導體
英文描述： N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
中文描述： ? -通道增強型功率MOS晶體管
文件頁數(shù)： 1/6頁
文件大?。?/td> 45K
代理商： STW8NA80
STW8NA80
STH8NA80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.3
I
±
30V GATE TO SOURCE VOLTAGERATING
I
100%AVALANCHE TESTED
I
REPETITIVEAVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE GHARGEMINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology.The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled rug-
gednessand superiorswitching performance.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW8NA80
STH8NA80FI
V
DS
V
DGR
V
GS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
800
V
800
±
30
V
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
I
D
I
D
7.2
4.5
A
4.5
2.8
A
I
DM
(
)
P
tot
28.8
28.8
A
175
70
W
1.4
0.56
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
4000
V
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
DSS
R
DS(on)
< 1.50
< 1.50
I
D
STW8NA80
STH8NA80FI
800 V
800 V
7.2 A
4.5 A
October 1998
TO-247
ISOWATT218
1
2
3
1
23
1/6
相關PDF資料
PDF描述
STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STHS2375A IEEE 802.3af PoE Powered Device (PD) Interface Controller(IEEE802.3af PoE PD(受電設備)接口控制器)
STHS2375L IEEE 802.3af PoE Powered Device (PD) Interface Controller(IEEE802.3af PoE PD(受電設備)接口控制器)
STHS2376A IEEE 802.3af PoE Powered Device (PD) Interface Controller(IEEE802.3af PoE PD(受電設備)接口控制器)
STHS2376L IEEE 802.3af PoE Powered Device (PD) Interface Controller(IEEE802.3af PoE PD(受電設備)接口控制器)
相關代理商/技術參數(shù)
參數(shù)描述
STW8NB100 功能描述:MOSFET RO 511-STW11NK100Z RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW8NB80 功能描述:MOSFET N-Ch 800 Volt 8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW8NB90 功能描述:MOSFET N-CH 900V 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW8NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET
STW8NC80Z 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*